Indium Semiconductor Buffer Layer for Dislocation Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Nitride semiconductor light emitting devices face reliability and efficiency issues due to increased dislocation density caused by lattice mismatching on hetero-substrates like sapphire, SiC, or Si, which affects their performance and reliability.
Innovation Solution
Incorporating an indium-containing semiconductor layer between conductive type semiconductor layers and a dislocation mode on the surface of the indium-containing layer to control dislocations, improve carrier injection, and enhance current flow, thereby stabilizing the device and increasing light emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a nitride semiconductor layer is formed on a hetero-substrate such as sapphire, SiC, or Si, then the device can be manufactured on commercially available substrates, but dislocation density increases due to lattice mismatching
Solution Approach 1:
An indium-containing semiconductor layer is introduced as an intermediate layer between the hetero-substrate and the nitride semiconductor layer. This intermediary layer serves as a buffer that reduces lattice mismatching and minimizes dislocation density, thereby maintaining device reliability while enabling manufacturing on commercially available substrates like sapphire, SiC, or Si
2Ease of manufacture
If a nitride semiconductor layer is formed on a hetero-substrate, then manufacturing can proceed with standard substrates, but light emitting efficiency decreases due to increased dislocation density
Solution Approach 1:
The indium-containing semiconductor layer acts as a mediator that reduces the harmful impact of lattice mismatching between the hetero-substrate and nitride semiconductor layer. By minimizing dislocation density through this intermediary layer, the light emitting efficiency is improved while maintaining compatibility with standard substrates
3Reliability
If dislocation density is reduced by using lattice-matched substrates, then reliability improves, but manufacturing flexibility and substrate selection are limited
Solution Approach 1:
The indium-containing semiconductor layer serves as a universal intermediary that can be used with various hetero-substrates (sapphire, SiC, Si, etc.). This approach maintains device reliability by reducing dislocation density while preserving substrate selection flexibility, as the intermediary layer adapts to different substrate types without requiring lattice-matched substrates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces dislocation concentration, improves current flow, and enhances the reliability and efficiency of light emitting devices by uniformly distributing dislocations and preventing carrier inequality, leading to improved performance and stability.
Implementation Method 1
dislocation density may be increased because of lattice mismatching due to hetero-junction
Implementation Method 2
Light emitting devices (LEDs) are compound semiconductor devices that convert electric energy into light energy
Data Source
AI summary
Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate, a first semiconductor layer containing indium (In) over the substrate, and a light emitting structure over the first semiconductor layer. A dislocation mode is disposed on a top surface of the first semiconductor layer.