Indium Sputtering Target Grain Refinement via Copper Alloying
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Solution Overview
Problem
Conventional sputtering targets, particularly those produced by thermal spraying, have low density and high oxygen content, leading to arcing issues during sputtering, which hinders stable film deposition with uniform thickness on substrates.
Innovation Solution
A sputtering target with a high relative density of 99% or more and fine crystal grains is achieved by adding a small amount of copper to indium, followed by a melt casting process and plastic working, which reduces the average grain size to 3,000 μm or less and oxygen concentration to 20 wtppm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thermal spraying method is used to form sputtering target, then fine crystal grains can be achieved, but the target density becomes low
Solution Approach 1:
The invention changes the production method from thermal spraying to melt casting, fundamentally altering the processing parameters to achieve both high density and fine grain structure. By controlling cooling rates and adding specific elements during casting, the patent achieves a density of 99% or more while maintaining fine crystal grains, resolving the contradiction between density and grain size control
Solution Approach 2:
The invention adds copper (1-100 wt%) to indium to create a composite material system. This composite approach not only refines the crystal grain structure through heterogeneous nucleation but also maintains high target density, simultaneously addressing both the grain size requirement and the density requirement that thermal spraying could not achieve together
2Manufacturing precision
If thermal spraying method is used to form sputtering target, then fine crystal grains can be achieved, but oxygen content becomes high
Solution Approach 1:
The invention changes the production method from thermal spraying to melt casting, fundamentally altering the processing parameters to achieve both high density and fine grain structure. By controlling cooling rates and adding specific elements during casting, the patent achieves a density of 99% or more while maintaining fine crystal grains, resolving the contradiction between density and grain size control
Solution Approach 2:
The melt casting process is performed in an inert or controlled atmosphere environment, preventing excessive oxygen absorption during melting and solidification. This contrasts with thermal spraying where material is exposed to atmosphere during deposition, thereby reducing oxygen content in the final target while maintaining fine grain structure
3Manufacturing precision
If low density sputtering target is used, then fine crystal grains can be achieved, but arcing occurs during sputtering
Solution Approach 1:
The invention changes the production method from thermal spraying to melt casting, fundamentally altering the processing parameters to achieve both high density and fine grain structure. By controlling cooling rates and adding specific elements during casting, the patent achieves a density of 99% or more while maintaining fine crystal grains, resolving the contradiction between density and grain size control
Solution Approach 2:
The invention adds copper (1-100 wt%) to indium to create a composite material system. This composite approach not only refines the crystal grain structure through heterogeneous nucleation but also maintains high target density, simultaneously addressing both the grain size requirement and the density requirement that thermal spraying could not achieve together
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables stable sputtering while eliminating arcing and ensures uniform film thickness on substrates, improving the efficiency and quality of film deposition.
Implementation Method 1
adding a small amount of copper to indium, then casting the mixture into a sputtering target raw material, for example, by a melt casting method
Implementation Method 2
cooling and solidifying the molten indium
Implementation Method 3
subjecting the sputtering target raw material to a given plastic working process
Implementation Method 4
subjecting the sputtering target raw material to a given plastic working process
Implementation Method 5
casting the mixture into a sputtering target raw material, for example, by a melt casting method
Implementation Method 6
a sputtering target that has a density high enough to make it possible to effectively eliminate a cause of arcing during sputtering
Implementation Method 7
The present invention relates to a sputtering target for use in sputtering as a technique for producing thin films on substrates
Data Source
AI summary
A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less.