High-Purity Indium Vacuum Distillation Process
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Solution Overview
Problem
Current methods for producing high-purity indium (In) are complex and time-consuming, particularly the vacuum distillation process which requires multiple stages and additional steps like directional solidification.
Innovation Solution
A method involving the distillation of refined indium at 1,000° C. to 1,100° C. under vacuum conditions of 1.0×10−3 Pa to 5.0×10−2 Pa, followed by condensation at 700° C. to 900° C. under similar vacuum conditions, using a vacuum distillation apparatus controlled by an intelligent system with PID regulating and auto-tuning functions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If vacuum distillation is used to prepare high-purity indium, then purity is improved, but process complexity increases
Solution Approach 1:
The vacuum distillation process is divided into two distinct stages: a first vacuum distillation stage followed by a second vacuum distillation stage. Each stage operates independently with specific temperature and time parameters, allowing systematic removal of different impurity types while maintaining process simplicity and avoiding the need for additional complex equipment.
2Manufacturing precision
If multiple-stage vacuum distillation is used, then purity is improved, but production time increases
Solution Approach 1:
The two-stage vacuum distillation process operates continuously without interruption. The indium undergoes sequential distillation in the first and second stages without removing it from the system, maintaining continuous heat treatment and vaporization-condensation cycles to efficiently achieve high purity while minimizing total processing time.
3Manufacturing precision
If directional solidification is added after vacuum distillation, then purity is improved, but process complexity increases
Solution Approach 1:
The invention utilizes the phase transition of indium from solid to vapor and back to solid during vacuum distillation. By controlling temperature and pressure conditions, indium vaporizes and then condenses on the condenser walls, naturally separating it from impurities without requiring additional solidification steps or equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly shortens the process flow while achieving high-purity indium with a purity of up to 99.9994%, effectively removing impurities by exploiting differences in vapor pressure.
Implementation Method 1
distilling refined In to obtain an In vapor-containing gas, where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa
Implementation Method 2
condensing the In vapor-containing gas to obtain the high-purity In, where the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa
Implementation Method 3
under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa
Implementation Method 4
effectively removing impurities by exploiting differences in vapor pressure
Data Source
AI summary
Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa; and the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10−3 Pa to 5.0×10−2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.