Individualized SOA Die Assembly for Thermally Isolated LiDAR
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Solution Overview
Problem
Existing LIDAR systems face challenges in efficiently manufacturing semiconductor optical amplifier (SOA) dies, leading to thermal crosstalk, reduced thermal isolation, and decreased yield due to monolithic arrays that do not optimize surface area utilization.
Innovation Solution
A manufacturing process for LIDAR systems involving individualized SOA dies on a thermally-dissipative substrate, where the semiconductor wafer is diced to form individualized SOA regions, allowing for improved coupling and thermal isolation, reducing thermal crosstalk, and enhancing yield by optimizing surface area utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If monolithic arrays are used for SOA dies, then manufacturing process is simpler, but thermal isolation is reduced and thermal crosstalk increases
Solution Approach 1:
The patent divides the monolithic SOA array into individualized SOA dies, with each die containing one or more SOA regions. This segmentation enables independent mounting of each die on the substrate, creating physical separation that improves thermal isolation and reduces thermal crosstalk between adjacent SOA channels while maintaining manufacturing efficiency through batch processing of multiple dies from a single wafer
2Volume of moving object
If monolithic arrays are used for SOA dies, then device structure is more compact, but surface area utilization is reduced
Solution Approach 1:
The patent transitions from a two-dimensional monolithic array layout to a three-dimensional arrangement where individualized SOA dies are mounted vertically or at angles on the substrate. This dimensional change allows more efficient utilization of the substrate surface area by stacking or arranging dies in multiple layers or orientations, thereby increasing the number of SOA channels that can be accommodated within a given footprint
3Temperature
If individualized SOA dies are used, then thermal isolation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent performs preliminary actions by forming multiple SOA dies on a single semiconductor wafer before dicing. This batch processing approach allows individualized dies to be manufactured with consistent process uniformity across the wafer, and subsequent dicing and mounting steps are streamlined through automated handling, thereby reducing the overall manufacturing complexity despite the increased structural complexity of individualized dies
4Reliability
If individualized SOA dies are used, then coupling to upstream/downstream components is improved, but alignment precision requirements increase
Solution Approach 1:
The patent incorporates self-alignment features directly into the individualized SOA dies, such as alignment marks, grooves, or protrusions that automatically guide the positioning of each die relative to upstream and downstream photonic components during assembly. This self-service approach improves coupling efficiency by ensuring precise alignment while reducing the stringency of external alignment precision requirements through automated self-positioning mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process improves process uniformity and yield of SOA dies, reduces manufacturing costs, and enhances thermal isolation by allowing for more efficient arrangement of SOA regions on the semiconductor wafer, resulting in a higher throughput and reduced waste.
Implementation Method 1
The semiconductor wafer can then be diced to split and isolate the SOA regions from each other. For instance, dicing the semiconductor wafer can produce a plurality of individualized SOA dies.
Implementation Method 2
the SOA dies may be mounted and spaced apart on a thermally-dissipative substrate. Individuating the SOA dies can provide for improved coupling of the amplifiers to upstream or downstream components of the LIDAR system, such as a photonics die or optics. Furthermore, the thermal isolation of the SOA channels corresponding to the SOA dies may be improved, thereby reducing thermal crosstalk
Data Source
AI summary
The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.