Indolocarbazole Resist Underlayer Composition for Etch and Heat Stability
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Solution Overview
Problem
In the production of semiconductor devices, existing resist underlayer films face challenges such as intermixing with resist layers, low dry etching resistance, high heat sensitivity, and excessive sublimation, which affect pattern resolution and substrate processing.
Innovation Solution
A resist underlayer film-forming composition utilizing an indolocarbazole novolak resin with a specific unit structure, which includes a divalent group derived from a compound with an indolocarbazole structure, is developed. This composition is designed to prevent intermixing, enhance dry etching resistance, and reduce sublimation, while also providing high heat resistance and anti-reflective properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional resist underlayer films are used, then substrate processing can be performed, but intermixing with resist layers occurs and dry etching resistance is low
Solution Approach 1:
The patent uses indolocarbazole novolak resin as a composite material that combines high dry etching resistance with compositional stability. The unique molecular structure of indolocarbazole provides both the etching resistance needed for substrate processing and the stability that prevents intermixing with the overlying resist layer, resolving the contradiction between these two properties.
Solution Approach 2:
The patent changes the chemical composition parameters of the resist underlayer film by introducing indolocarbazole novolak resin with specific structural characteristics. This parameter change in the molecular structure results in improved dry etching resistance while maintaining compositional stability, eliminating the need to trade off between these properties.
2Manufacturing precision
If resist film thickness is decreased to improve resolution, then pattern resolution improves, but sufficient film thickness for substrate processing cannot be obtained
Solution Approach 1:
The indolocarbazole novolak resin-based underlayer film serves multiple functions simultaneously: it provides the etching resistance needed for substrate processing and creates a stable interface that prevents intermixing, allowing the resist film to be made thinner for improved resolution without sacrificing processing capability. The underlayer becomes a multi-functional component that compensates for the reduced resist thickness.
3Temperature
If existing polymer resins are used for resist underlayer film, then film formation is achieved, but heat resistance is insufficient and sublimation occurs
Solution Approach 1:
The patent fundamentally changes the thermal parameters of the resist underlayer system by replacing conventional polymer resins with indolocarbazole novolak resin. This chemical parameter change results in dramatically improved heat resistance and eliminated sublimation, as the indolocarbazole structure possesses inherent thermal stability that conventional polymers lack.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The indolocarbazole novolak resin-based resist underlayer film composition effectively prevents intermixing with resist layers, offers high dry etching resistance and heat stability, minimizes sublimation, and provides excellent anti-reflective performance, thereby enabling precise pattern formation and efficient substrate processing in semiconductor device manufacturing.
Implementation Method 1
The present invention can impart a performance of effectively absorbing reflected light from a substrate during use of irradiated light in microprocessing
Data Source
AI summary
A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.