Inductance Shielding Structure for Semiconductor EMI Isolation
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Solution Overview
Problem
Inductance structures in semiconductor devices are not adequately shielded from external electromagnetic fields, leading to induced charges that degrade their performance in noise reduction and current stabilization.
Innovation Solution
A shielding structure is arranged around the inductance structure, partially or fully, to shield it from external electromagnetic fields, improving its performance in noise reduction and current stabilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If no shielding structure is provided for the inductance structure, then the device complexity is reduced, but the inductance structure is exposed to external electromagnetic fields causing induced charges that degrade performance
Solution Approach 1:
The shielding structure is formed by depositing conductive material layers (first shielding layer, second shielding layer) that nest around the inductance structure, with each layer positioned at different heights above the substrate. This nested arrangement provides comprehensive electromagnetic shielding while maintaining integration within the existing device architecture.
Solution Approach 2:
Dielectric layers are introduced as intermediary materials between the conductive shielding layers and the inductance structure. These dielectric intermediaries provide electrical isolation while allowing the shielding layers to effectively block electromagnetic fields from reaching the inductance structure.
2Object-affected harmful factors
If a shielding structure is added around the inductance structure, then protection from electromagnetic fields is improved, but the manufacturing process becomes more complex
Solution Approach 1:
The shielding structure is segmented into multiple discrete conductive layers (first shielding layer, second shielding layer) positioned at different heights, with dielectric layers between them. This segmentation allows each layer to be deposited and patterned independently using standard semiconductor manufacturing techniques, making the complex shielding function achievable through sequential, manageable processing steps.
3Reliability
If the shielding structure is positioned close to the inductance structure, then shielding effectiveness is improved, but the risk of electrical interference and manufacturing difficulty increases
Solution Approach 1:
The shielding layers are positioned in the vertical dimension (height above substrate) rather than only in the lateral plane. The first shielding layer is positioned at a first height and the second shielding layer at a second height above the substrate, creating a three-dimensional shielding arrangement that effectively blocks electromagnetic fields from multiple angles while maintaining appropriate spacing from the inductance structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shielding structure effectively reduces unwanted charges induced by external electromagnetic fields, enhancing the stability and reliability of the current in semiconductor devices.
Implementation Method 1
A shielding structure is arranged around the inductance structure, partially or fully, to shield it from external electromagnetic fields
Data Source
AI summary
A semiconductor device includes an inductance structure and a shielding structure. The shielding structure is arranged to at least partially shield the inductance structure from external electromagnetic fields. The shielding structure includes a shielding structure portion arranged along a side of the inductance structure such that the shielding structure portion is around at least a portion of a perimeter of the inductance structure.