Inductive Applicator Ring for Edge Plasma Control
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Solution Overview
Problem
In semiconductor manufacturing, particularly with FinFET technology, there is a challenge in achieving uniformity and fine-tuned plasma control near the substrate edge due to violent changes in electromagnetic fields, plasma density, and chemistry caused by multiple material interfaces and geometric shapes, which affects transistor density and processing uniformity.
Innovation Solution
The use of a process chamber with an inductive coil and an inductive applicator ring coupled to a lift mechanism to inductively couple RF energy and fine-tune the plasma near the substrate edge, allowing for precise control of plasma density and chemistry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing is used, then global process tuning is achieved, but localized plasma control near substrate edge is insufficient
Solution Approach 1:
The plasma control system is segmented into multiple independent RF power sources, each controlling a specific region (center, inner edge, outer edge) of the substrate. This allows localized tuning of plasma parameters in different zones while maintaining overall process uniformity across the entire substrate.
Solution Approach 2:
Different regions of the substrate are assigned different plasma characteristics through dedicated RF power sources. The center region, inner edge region, and outer edge region each receive customized plasma conditions optimized for their specific requirements, enabling local quality control while maintaining global consistency.
2Productivity
If multiple material interfaces and geometric shapes are present near substrate edge, then transistor density increases, but electromagnetic field and plasma density become unstable
Solution Approach 1:
The edge regions of the substrate are provided with dedicated RF power sources that independently control plasma parameters in these challenging areas. This local control compensates for the instability caused by multiple material interfaces and geometric shapes, maintaining plasma density stability while supporting high transistor density.
Solution Approach 2:
The system dynamically adjusts RF power delivery to different substrate regions based on real-time plasma conditions. The multiple RF power sources can independently modulate their output to maintain stable plasma density in edge regions despite the complex electromagnetic environment created by high-density transistor structures.
3Manufacturing precision
If single RF power source is used, then system simplicity is maintained, but fine-tuned plasma control is not achieved
Solution Approach 1:
The single RF power source is segmented into multiple independent power delivery channels, each controlling a specific radial region of the substrate. This segmentation enables fine-tuned plasma control in different zones while keeping the overall system architecture relatively simple and manageable.
Solution Approach 2:
The multiple RF power sources share common hardware infrastructure (power supply unit, control system, matching networks) while providing differentiated plasma control functions. This multi-functionality approach achieves precise localized plasma tuning without proportionally increasing system complexity, as the added components leverage existing system resources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved process uniformity and control near the substrate edge, enhancing the ability to manage complex transistor structures and increasing transistor density across the substrate, thereby addressing the challenges of non-uniformity and edge-specific plasma management.
Implementation Method 1
an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support
Implementation Method 2
an inductive applicator ring coupled to a lift mechanism to position the inductive applicator ring within the internal processing volume, wherein the inductive applicator ring is configured to couple RF energy from the first inductive exciter coil to the plasma
Data Source
AI summary
Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber and having a support surface to support a substrate; an inductive coil disposed above the dielectric lid to inductively couple RF energy into the internal processing volume to form a plasma above the substrate support; and a first inductive applicator ring coupled to a lift mechanism to position the first inductive applicator ring within the internal processing volume.