Inductive Coupling for 3D Memory Interconnects

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Solution Overview

Problem

In three-dimensional stack mounting of nonvolatile semiconductor memory devices, the complexity and cost of manufacturing processes for through-via formation and the increased chip area due to inductor element formation hinder efficient inter-chip communication, particularly when a large number of chips are stacked, leading to performance degradation and increased manufacturing costs.

Innovation Solution

A nonvolatile semiconductor memory device configuration utilizing a common inductor element for both transmission and receiving circuits, with a control chip having a larger inductor element than the memory chips, allowing for inter-chip communication through inductive coupling, reducing chip area and manufacturing complexity, and enabling high-speed interfaces without increasing the number of wire bondings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a through-via is formed to penetrate the substrate for inter-chip communication, then signal transmission between chips is enabled, but manufacturing complexity and costs increase

Engineering Contradiction:
Improveinter-chip communicationVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the inductor element from the substrate structure and places it only on specific chips (transmitter or receiver) that require communication functionality. This eliminates the need for through-vias to penetrate all substrate layers, reducing manufacturing complexity while maintaining inter-chip communication capability through magnetic coupling between externally mounted inductors

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If an inductor element is formed in the semiconductor chip for communication, then inter-chip signal transmission is achieved, but chip area increases

Engineering Contradiction:
Improveinter-chip communicationVSAvoidchip area
Core Design Contradiction:
ReliabilityVSArea of moving object

Solution Approach 1:

The patent moves the inductor element from the two-dimensional chip plane to the three-dimensional external space by mounting it on the chip surface or behind the chip. This dimensional transition allows the inductor to be positioned outside the main chip area, reducing the occupied chip area while maintaining the necessary inductance value for communication

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If wire bonding is used for signal transmission between stacked chips, then inter-chip communication is achieved, but the number of wire bondings becomes excessive when many chips are stacked

Engineering Contradiction:
Improveinter-chip communicationVSAvoidnumber of wire bondings
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent replaces the mechanical wire bonding system with an electromagnetic field-based communication system using inductors. Magnetic coupling between inductors on adjacent chips enables signal transmission without physical wire connections, dramatically reducing the number of wire bondings required while supporting multi-chip stacking configurations

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances inter-chip communication efficiency, reduces power consumption, and prevents chip area expansion, enabling high-speed interfaces and simpler asynchronous communication systems, even with increased chip stacking, while maintaining manufacturing cost-effectiveness.

Implementation Method 1

inter-chip communication by inductive coupling between inductor elements

Methodology Applied
Scientific EffectInductive coupling: Electromagnetic Induction

Data Source

PatentUS8391040B2Nonvolatile semiconductor memory device
Publication Date: 2013.03.05 KIOXIA CORP
  • US8391040B2 patent drawing
  • US8391040B2 patent drawing
  • US8391040B2 patent drawing

AI summary

According to one embodiment, a nonvolatile semiconductor memory device includes a first memory chip, a second memory chip, and a control chip. The first chip includes a first inductor configured to transmit/receive a signal, and a memory cell. The second chip is disposed on the first chip and includes a second inductor configured to transmit/receive a signal, and a memory cell. The control chip includes a control circuit configured to control the first and second chips, and a third inductor configured to transmit/receive a signal to/from the first and second inductors. The outer peripheries of the first and second inductors are included in a closed space produced by extending the outer periphery of the third inductor in a direction perpendicular to a plane that includes the third inductor. The inductance of the third inductor is greater than at least one of the inductances of the first and second inductors.