Inductive Gas Injector for Low-Temperature Semiconductor Processing
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Solution Overview
Problem
Existing semiconductor processing methods face challenges in achieving high reaction rates at lower thermal budgets without causing substrate damage or warpage, particularly in low temperature processing environments.
Innovation Solution
A heated gas injection system using an inductive heater and graphite rod to preheat process gases before they enter the processing chamber, combined with real-time temperature control using sensors to optimize activation energy and reaction rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If low temperature processing is used, then substrate damage and warpage are minimized, but reaction rates decrease
Solution Approach 1:
The system preheats the process gas to a high temperature (e.g., 800°C) before it contacts the substrate, so that the thermal activation occurs in the gas phase rather than directly heating the substrate. This preliminary heating of the gas enables sufficient reaction rates while the substrate remains at a lower, safer temperature to avoid damage and warpage.
Solution Approach 2:
The invention creates a localized high-temperature zone in the gas flow path through the heated injector, while the substrate area maintains a lower temperature. This spatial separation of temperature zones allows different parts of the system to have different thermal conditions optimized for their specific functions: high temperature for reaction activation in the gas, low temperature for substrate protection.
2Productivity
If high temperature processing is used, then reaction rates increase, but substrate damage and warpage occur
Solution Approach 1:
The system preheats the process gas to a high temperature (e.g., 800°C) before it contacts the substrate, so that the thermal activation occurs in the gas phase rather than directly heating the substrate. This preliminary heating of the gas enables sufficient reaction rates while the substrate remains at a lower, safer temperature to avoid damage and warpage.
Solution Approach 2:
The invention creates a localized high-temperature zone in the gas flow path through the heated injector, while the substrate area maintains a lower temperature. This spatial separation of temperature zones allows different parts of the system to have different thermal conditions optimized for their specific functions: high temperature for reaction activation in the gas, low temperature for substrate protection.
3Reliability
If gas temperature is increased, then activation energy increases and reaction rates improve, but thermal budget increases causing substrate damage
Solution Approach 1:
The system preheats the process gas to a high temperature (e.g., 800°C) before it contacts the substrate, so that the thermal activation occurs in the gas phase rather than directly heating the substrate. This preliminary heating of the gas enables sufficient reaction rates while the substrate remains at a lower, safer temperature to avoid damage and warpage.
Solution Approach 2:
The invention creates a localized high-temperature zone in the gas flow path through the heated injector, while the substrate area maintains a lower temperature. This spatial separation of temperature zones allows different parts of the system to have different thermal conditions optimized for their specific functions: high temperature for reaction activation in the gas, low temperature for substrate protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances reaction rates and substrate throughput by increasing precursor activation energy while minimizing substrate damage, allowing for more controlled and efficient low-temperature processing.
Implementation Method 1
an inductive coil disposed around the graphite rod
Implementation Method 2
an inductive heater coupled to the inject assembly... configured to heat a gas
Implementation Method 3
a graphite rod disposed in the heater housing... configured to heat a gas
Implementation Method 4
flow a second gas between the heater housing and a graphite rod
Data Source
AI summary
A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.