Inductive Semiconductor Layout With Annular Wiring Against Discharge
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Solution Overview
Problem
The existing semiconductor device design with spiral inductors is prone to abnormal discharge due to electric field concentration at the vertices of the inductor shapes, which can lead to reliability issues when connected with semiconductor elements operating at different voltage levels.
Innovation Solution
The semiconductor device incorporates an annular wiring that surrounds the second inductor without vertices, along with a center pad and inner pads, to reduce electric field concentration and prevent abnormal discharge, while maintaining efficient signal transmission through inductive coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If spiral wiring is used for the inductor, then the inductor can be formed with a compact structure, but electric field concentration occurs at the vertices causing abnormal discharge
Solution Approach 1:
The patent replaces the spiral wiring with vertices with a curved annular wiring pattern that has no vertices. The continuous curved shape eliminates the angular points where electric field concentration occurs, thereby preventing abnormal discharge while maintaining the inductor's compact footprint and electrical functionality.
2Ease of manufacture
If vertices are present in the inductor shape, then the spiral wiring structure is achieved, but electric field concentration leads to reduced reliability
Solution Approach 1:
The invention substitutes the angular spiral wiring structure with a curved annular wiring pattern. This curved geometry eliminates vertices while remaining compatible with standard semiconductor fabrication processes, thus maintaining ease of manufacture while dramatically improving reliability by preventing electric field concentration at sharp corners.
3Adaptability or versatility
If different voltage levels are used for power and MCU elements, then functional differentiation is achieved, but voltage difference increases risk of damage to low-voltage elements
Solution Approach 1:
The patent introduces an annular wiring structure as an intermediary element between high-voltage power circuits and low-voltage MCU circuits. This intermediate structure provides electromagnetic coupling while maintaining electrical isolation, allowing signal transmission between different voltage domains without direct electrical connection, thus protecting low-voltage elements from high-voltage damage.
Solution Approach 2:
The invention replaces direct electrical connection with electromagnetic induction through the annular inductor structure. Instead of using wired connections that would expose low-voltage MCU elements to high-voltage risks, the system uses magnetic field coupling to transmit signals, substituting a physical electrical pathway with a magnetic field-based communication channel.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability of the semiconductor device by suppressing abnormal discharge and ensuring reliable operation across different voltage levels, thereby improving the overall performance and longevity of the device.
Implementation Method 1
the semiconductor element for power, and the semiconductor element for the MCU can transmit signals to each other by electromagnetic inductive coupling through the first inductor and second inductor
Implementation Method 2
An electric field tends to concentrate on the vertex because a part located in a vicinity of the vertex, of the spiral wiring, is angular toward outward in plan view
Data Source
AI summary
A semiconductor device has a semiconductor substrate, a first insulating layer, a first inductor, a second insulating layer, a second inductor, a pad and an annular wiring. The first insulating layer is formed on the semiconductor substrate. The first inductor is directly formed on the first insulating layer. The second insulating layer is formed on the first insulating layer such that the second insulating layer covers the first inductor. The second inductor is directly formed on the second insulating layer such that the second inductor faces the first inductor. The pad is directly formed on the second insulating layer. The pad is electrically connected with the second inductor. The annular wiring is electrically connected with the pad. The annular wiring is spaced apart from the second inductor. The annular wiring surrounds the second inductor without forming a vertex in plan view.