Inductive Plasma Deposition Antenna Tilting for Substrate Protection
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Solution Overview
Problem
Existing deposition methods face challenges in suppressing substrate damage and stabilizing plasma generation during the atomic layer deposition process.
Innovation Solution
A deposition apparatus with an inductive magnetic field and radio frequency power supply is used, employing a specific gas switching and antenna tilting mechanism to control plasma formation and refinement, including the use of ignition gases and refining gases to form and refine silicon oxide films on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high output power is applied to generate plasma, then plasma generation efficiency is improved, but substrate damage increases
Solution Approach 1:
The method applies preliminary action by first generating plasma at low output power to establish a stable plasma state before the substrate arrives, then maintaining this plasma state at low power during substrate processing. This prevents substrate damage while ensuring plasma is already formed and stable, eliminating the need to apply high power during substrate exposure.
Solution Approach 2:
The patent uses an intermediary approach by introducing a specific gas mixture composition that facilitates easy plasma ignition at low power. The gas composition acts as a mediator that enables plasma generation without requiring high output power, thereby preventing substrate damage while maintaining plasma generation efficiency.
2Productivity
If plasma is generated continuously, then film deposition efficiency is improved, but plasma stability deteriorates
Solution Approach 1:
The method employs periodic action by cyclically alternating between plasma generation phases and non-plasma phases. Plasma is generated at low power periodically, allowing the plasma state to stabilize between cycles. This periodic approach maintains overall deposition efficiency while ensuring plasma stability during active processing periods.
Solution Approach 2:
The system performs preliminary plasma generation before substrate processing begins, establishing a stable plasma state in advance. This preliminary action ensures that when deposition actually starts, the plasma is already stable and ready, improving both deposition efficiency and plasma stability without requiring continuous high-power plasma generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces substrate damage and stabilizes plasma generation, enabling uniform film deposition and improving productivity by optimizing plasma processing conditions.
Implementation Method 1
the ignition gas containing a noble gas and an additive gas that causes Penning effect by being added to the noble gas
Implementation Method 2
setting output power of the radio frequency power supply to a first predetermined value, thereby causing the ignition gas to be formed into a plasma
Data Source
AI summary
A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.


