Inductive Coupling Plasma for High Aspect Ratio Groove Films
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Solution Overview
Problem
Existing substrate processing technologies face challenges in forming films with high step coverage on grooves with high aspect ratios, which is crucial for uniform semiconductor device characteristics.
Innovation Solution
A substrate processing apparatus and method utilizing an inductive coupling structure with a resonance coil and waveform adjustment circuit to generate plasma with a specific wavelength, allowing for the formation of a film with high step coverage on substrates with high aspect ratio grooves by oxidizing the silicon-containing layer using oxygen gas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed on grooves with high aspect ratios using conventional plasma processing, then the grooves can be processed, but the film cannot achieve high step coverage with uniform thickness
Solution Approach 1:
The patent changes the physical parameters of plasma processing by controlling the plasma potential to be lower than or equal to the substrate electric potential. This parameter change prevents ion acceleration and enables uniform film deposition on vertical sidewalls of high aspect ratio grooves, achieving high step coverage and uniform thickness simultaneously
Solution Approach 2:
The patent applies different processing conditions to different regions of the groove structure. By controlling plasma potential locally at the groove regions, it enables uniform film formation on vertical sidewalls while maintaining the high aspect ratio geometry, achieving localized high step coverage
2Productivity
If plasma processing is used to form films on high aspect ratio grooves, then processing can occur, but ion acceleration causes sputtering and damages the substrate
Solution Approach 1:
The patent changes the electric potential parameter of the plasma to be lower than or equal to the substrate potential. This prevents ion acceleration and the resulting sputtering damage, while still enabling film formation through neutral species deposition, thus maintaining productivity without harmful effects
Solution Approach 2:
The patent converts the potentially harmful ion acceleration effect into a beneficial low-damage process by controlling plasma potential. The lack of ion acceleration, which would normally cause sputtering, is transformed into an advantage that protects the substrate while still achieving film deposition through other plasma mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of films with uniform thickness on both side and bottom portions of grooves, improving the uniformity and reducing variations in semiconductor device characteristics, while preventing ion acceleration and sputtering, thus enhancing device performance and lifespan.
Implementation Method 1
an inductive coupling structure disposed outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power
Implementation Method 2
a plasma generation space where a plasma is generated
Implementation Method 3
oxidizing the substrate in the substrate processing chamber using the plasma
Data Source
AI summary
A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber.