Inductively-Coupled Plasma Source for Semiconductor Etching

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Solution Overview

Problem

Conventional semiconductor processing technologies face challenges in achieving high-quality etching due to electrode sputtering and limited power processing, which affects uniformity and performance, particularly in penetrating constrained trenches and maintaining delicate structures.

Innovation Solution

Incorporating an inductively-coupled plasma (ICP) source within the processing chamber, which reduces electrode sputtering, decouples plasma ion energy from ion density, and allows for higher power application, enhancing etch rates and throughput.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If local plasma is used for etching, then trench penetration and structure preservation are improved, but electrode sputtering and substrate damage occur

Engineering Contradiction:

Improvetrench penetration qualityVSAvoidelectrode sputtering and substrate damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The plasma source is segmented into two distinct components: an inductively-coupled plasma (ICP) source for generating high plasma density without electrode contact, and a capacitively-coupled plasma (CCP) electrode for providing ion directionality. This segmentation allows each component to perform its specialized function, resolving the contradiction between trench penetration quality and electrode damage

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

An inductively-coupled plasma source is introduced as an intermediary between the electrode and the substrate processing region. The ICP source generates plasma remotely without direct electrode contact with the substrate, eliminating electrode sputtering while maintaining plasma benefits for trench penetration and structure preservation

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If higher power is applied to increase etch rate, then productivity is improved, but electrode sputtering and substrate damage increase

Engineering Contradiction:

Improveetch rateVSAvoidelectrode sputtering and substrate damage

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The traditional capacitively-coupled electrode system is replaced with an inductively-coupled plasma source that uses electromagnetic induction rather than direct electrical contact. This substitution allows high power application for increased etch rates without the mechanical electrode-substrate contact that causes sputtering and damage

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The ICP source acts as an intermediary that enables high power transfer to the plasma without requiring high power at the electrode-substrate interface. The inductive coupling mechanism transfers energy through the plasma medium, allowing high productivity while minimizing harmful effects on electrodes and substrate

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The ICP source reduces sheath voltages, minimizes component damage, and increases plasma density, enabling more efficient and uniform etching with reduced deformation of substrates, thus improving the quality and performance of semiconductor processing.

Implementation Method 1

an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material

Methodology Applied

Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

The substrate support may include an electrode operable to form a capacitively-coupled plasma within the processing region

Methodology Applied

Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS20210183620A1Chamber with inductive power source

Publication Date: 2021.06.17 APPLIED MATERIALS INC

AI summary

Exemplary processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a showerhead positioned within the chamber housing. The showerhead may at least partially separate the interior region into a remote region and a processing region. Sidewalls of the chamber housing may at least partially define the processing region. The chambers may include a substrate support extending into the processing region and configured to support a substrate. The chambers may include an inductively-coupled plasma source positioned between the showerhead and the substrate support. The inductively-coupled plasma source may include a conductive material disposed within a dielectric material. The inductively-coupled plasma source may form a portion of the sidewalls of the chamber housing.