Inductive Plasma Substrate Processing for In-Plane Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The uneven density of plasma generated on a substrate surface during plasma-excited processing leads to non-uniformity in semiconductor device manufacturing, affecting the performance of the devices.
Innovation Solution
A method involving a substrate processing apparatus with a resonance coil and a susceptor configuration, where the substrate is positioned below the coil's lower end, and high-frequency power is applied to resonate the coil, generating a uniform plasma distribution by controlling the plasma generation space and substrate process space to ensure consistent plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is generated on the substrate surface during processing, then the substrate can be modified (oxidizing or nitriding process), but the plasma density becomes uneven leading to non-uniform processing
Solution Approach 1:
The patent introduces a vertical dimension to the plasma generation system by positioning the resonance coil above the substrate and controlling plasma generation in a vertical plasma generation space. This three-dimensional plasma generation approach allows uniform plasma distribution across the substrate surface by utilizing vertical plasma propagation, transforming the traditional planar plasma generation into a volumetric process that inherently provides better uniformity.
Solution Approach 2:
The patent applies high-frequency power to the resonance coil to generate plasma, utilizing electromagnetic induction and resonance effects. By controlling the frequency and power parameters of the electromagnetic field, the system achieves uniform plasma density distribution across the substrate surface, resolving the uniformity issue through precise parameter optimization.
2Productivity
If a coil is used to generate plasma, then substrate processing can be performed, but the coil structure may create non-uniform plasma distribution
Solution Approach 1:
The resonance coil is positioned in a vertical orientation above the substrate, creating a vertical plasma generation space. This vertical configuration allows the electromagnetic field to penetrate and generate plasma uniformly across the substrate area, utilizing the third dimension (height) to achieve better planar uniformity compared to horizontal coil configurations.
Solution Approach 2:
The system utilizes high-frequency electromagnetic oscillation (resonance) to generate plasma. The resonant oscillation at specific frequencies creates a stable and uniform electromagnetic field distribution, which in turn produces uniform plasma density across the substrate surface, improving processing uniformity while maintaining productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the in-plane uniformity of the substrate process, improving the uniformity of the plasma density and reducing variations in semiconductor device performance.
Implementation Method 1
a high-frequency power supply configured to supply high-frequency power to the resonance coil
Implementation Method 2
the substrate is positioned below the coil's lower end, and high-frequency power is applied to resonate the coil
Implementation Method 3
plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil
Data Source
AI summary
A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.