Inductive Component Sidewall Profiling to Reduce Semiconductor Cracking
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Solution Overview
Problem
The increasing integration density of semiconductor devices poses challenges in manufacturing, particularly in forming inductive components with precise electrical properties and preventing cracking and reliability issues due to stress and misshapen structures during thermal processes.
Innovation Solution
A method involving a double exposure process for forming a polymer layer with tunable sidewall profiles, combined with magnetic and insulation layers, to create an inductive component with controlled electrical properties and stress management, reducing cracking and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration density is increased by reducing minimum feature size, then more components can be integrated into a given area, but manufacturing challenges arise including stress and cracking issues during thermal processes
Solution Approach 1:
The patent divides the inductive component into multiple segments: a bottom electrode, a magnetic layer, an insulating layer, and a top electrode. This segmentation allows each layer to be optimized independently for stress management and electrical performance, reducing cracking issues while maintaining high integration density
Solution Approach 2:
The patent employs composite material structures combining different functional layers (conductive electrodes, magnetic materials, insulating layers) with tailored properties. Each material is selected to contribute specific characteristics such as stress relief, magnetic permeability, or electrical insulation, enabling reliable high-density integration
2Ease of manufacture
If conventional single exposure process is used for forming polymer layer, then process is simple, but sidewall profile cannot be precisely controlled leading to misshapen structures
Solution Approach 1:
The patent segments the exposure process into two distinct steps: first exposure through a first mask to form an initial pattern, and second exposure through a second mask to refine the sidewall profile. This segmented approach achieves precise profile control while maintaining reasonable process complexity
Solution Approach 2:
The first exposure creates a preliminary pattern that serves as a foundation for the second exposure. This preliminary action allows the second exposure to focus specifically on refining the sidewall profile, achieving precise control without requiring the second mask to define the entire pattern from scratch
3Device complexity
If polymer layer sidewall is formed with conventional methods, then structure is simple, but stress management is poor causing reliability issues during thermal processes
Solution Approach 1:
The patent forms the polymer layer sidewall with a curved profile rather than a straight vertical wall. This curvature distributes stress more evenly during thermal expansion and contraction, preventing crack initiation and propagation while maintaining overall structural simplicity
Solution Approach 2:
The patent controls the sidewall profile by adjusting exposure parameters (energy, wavelength, mask distance) and development conditions. These parameter changes create the optimized curved profile that manages stress effectively without complicating the device structure
4Ease of manufacture
If inductive component properties are not precisely controlled, then manufacturing is easier, but electrical properties such as inductance and coupling factor cannot be optimized
Solution Approach 1:
The patent incorporates feedback loops in the manufacturing process, including measurement of inductance and coupling factor after fabrication, and adjustment of exposure and deposition parameters based on measured performance. This feedback enables precise electrical property control while maintaining manufacturing efficiency
Solution Approach 2:
The patent systematically varies manufacturing parameters (exposure energy, layer thicknesses, material compositions) to achieve target electrical properties. By establishing parameter windows and process windows, precise inductance and coupling factor control is achieved without significantly complicating the manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for precise control of inductive component properties, such as inductance and coupling factor, while minimizing cracking and enhancing device reliability by adjusting angles and lateral offsets in the polymer and magnetic layers.
Implementation Method 1
The second polymer layer is formed by a double exposure process using two different mask layers
Data Source
AI summary
A method of forming a semiconductor device includes: forming a passivation layer over a conductive pad that is disposed over a substrate; and forming an inductive component over the passivation layer, including: forming a first insulation layer and a first magnetic layer successively over the passivation layer; forming a first polymer layer over the first magnetic layer; forming a first conductive feature over the first polymer layer; forming a second polymer layer over the first polymer layer and the first conductive feature; patterning the second polymer layer, where after the patterning, a first sidewall of the second polymer layer includes multiple segments, where an extension of a first segment of the multiple segments intersects the second polymer layer; and after patterning the second polymer layer, forming a second insulation layer and a second magnetic layer successively over the second polymer layer.