Semiconductor Inductor Layout With Active Region Segmentation

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Solution Overview

Problem

Existing inductors suffer from high eddy current-induced loss and low quality factor Q due to large active regions, which are not effectively fragmented in current manufacturing processes.

Innovation Solution

A semiconductor structure is designed with first isolation structures running through the active region, fragmenting it and reducing its area, and a method is employed to form these structures using a global manufacturing process, thereby minimizing eddy currents and improving the quality factor Q.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If the active region area is large, then the inductance coil can be formed, but eddy current-induced losses increase and quality factor Q decreases

Engineering Contradiction:
Improveeddy current-induced lossesVSAvoidactive region area
Core Design Contradiction:
Loss of energyVSArea of stationary object

Solution Approach 1:

The patent applies segmentation by dividing the continuous active region into multiple isolated segments through isolation structures. The first isolation structures divide the first active region into multiple segments along the first direction, while the second isolation structures divide the second active region into multiple segments along the second direction. This segmentation interrupts eddy current paths, reducing eddy current-induced losses while maintaining the overall active region area needed for inductance coil formation.

Inventive Principle:
Principle #1Segmentation

2Loss of energy

If isolation structures are added to fragment the active region, then eddy current losses are reduced, but device complexity increases

Engineering Contradiction:
Improveeddy current lossesVSAvoidstructure complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent merges the formation of first and second isolation structures into a unified process. Both sets of isolation structures are formed using the same dielectric material and similar fabrication steps, integrating two separate isolation functions into a single structural solution. This merging approach reduces process complexity while achieving the dual benefit of eddy current suppression in both the first and second active regions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric layer serves multiple functions simultaneously: it acts as an isolation structure to suppress eddy currents, provides electrical insulation for the inductance coil, and serves as a structural support layer. This multi-functionality reduces the need for additional separate components, thereby reducing device complexity while maintaining effective eddy current suppression.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed structure reduces eddy current-induced loss and enhances the quality factor Q of the inductor by fragmenting the active region, while simplifying the manufacturing process and improving integration efficiency.

Implementation Method 1

An inductor is a component that may convert electrical energy into magnetic energy and store the magnetic energy. Inductors are widely used in radio-frequency devices

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

The quality factor Q of an inductor is related to DC resistance of a coil wire of the inductance coil. By reducing the resistance value of the inductance coil, the quality factor Q of the inductor may be improved

Methodology Applied
Scientific EffectEddy currents: Eddy Currents

Data Source

PatentUS12610566B2Semiconductor structure and method of forming the same
Publication Date: 2026.04.21 SEMICON MFG INT (SHANGHAI) CORP
  • US12610566B2 patent drawing
  • US12610566B2 patent drawing
  • US12610566B2 patent drawing

AI summary

A semiconductor structure includes a substrate. The substrate includes a shielding region and a device region. The shielding region includes a first active region parallel to a first direction. The device region includes a second active region parallel to the first direction. The semiconductor structure also includes first isolation structures located on the shielding region. The first isolation structures run through the first active region along the second direction. The semiconductor structure also includes first gate structures located on the device region. The first gate structures cross the second active region along the second direction. The semiconductor structure also includes a second isolation structure located on the device region. The second isolation structure runs through the second active region along the second direction. The semiconductor structure also includes a dielectric layer on the substrate and an inductance coil on the dielectric layer.