Inductor Shielding Structure With High-k Liner for Higher Q Factor
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Solution Overview
Problem
Inductors in semiconductor devices experience reduced Q factor due to eddy currents generated by the magnetic field, affecting their performance.
Innovation Solution
A semiconductor device with a shielding structure composed of conductive filling layers and high-k dielectric liner layers disposed under the inductor, which cuts off or reduces eddy currents, thereby increasing the Q factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If an inductor is operated, then the magnetic field is generated, but eddy current is generated which reduces the Q factor
Solution Approach 1:
The patent converts the harmful eddy current effect into a beneficial shielding effect by placing conductive filling layers in recesses beneath the inductor. These conductive layers, when exposed to the inductor's magnetic field, generate eddy currents that create an opposing magnetic field, effectively shielding the underlying substrate and reducing energy loss.
Solution Approach 2:
The patent introduces high-k dielectric liner layers as intermediary materials between the conductive filling layers and the substrate. These dielectric layers with high permittivity values (greater than 3.9) act as mediators that enhance the shielding effect while electrically isolating the conductive layers from direct contact with the substrate, thereby reducing eddy current losses.
2Reliability
If a shielding structure is added to reduce eddy current, then the Q factor is improved, but the device complexity increases
Solution Approach 1:
The shielding structure is segmented into multiple discrete components: conductive filling layers placed in recesses, high-k dielectric liner layers, and dielectric layers. This segmentation allows each component to perform its specific function while simplifying the overall manufacturing process and reducing structural complexity compared to a monolithic shielding design.
Solution Approach 2:
The shielding structure utilizes recesses (void spaces) in the substrate that are partially filled with conductive materials and dielectric materials. This porous or partially-filled approach reduces the amount of material required compared to completely filled structures, thereby reducing device complexity while maintaining shielding effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the shielding structure enhances the Q factor of the inductor, improving its performance by reducing eddy current losses.
Implementation Method 1
The plurality of high-k dielectric liner layers are between the plurality of conductive filling layers and the substrate
Implementation Method 2
When the inductor is in operation, the magnetic field in the inductor region readily generates eddy current
Data Source
AI summary
A semiconductor device includes a substrate, a shielding structure, and an inductor. The shielding structure is disposed in the substrate and includes a plurality of conductive filling layers and a plurality of high-k dielectric liner layers. The plurality of conductive filling layers are in a plurality of recesses of the substrate. The plurality of high-k dielectric liner layers are between the plurality of conductive filling layers and the substrate. The plurality of conductive filling layers are electrically connected to each other and grounded. The inductor is located above the shielding structure.