Inductor Structure with Shielding Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional inductor structures in integrated circuits face challenges in achieving high Q values due to parasitic capacitance and increased resistance from the silicon substrate, which degrades the inductor's performance and energy efficiency.
Innovation Solution
The inductor structure incorporates a shielding structure with grounded shielding layers symmetrically disposed between the helix windings and the substrate, reducing parasitic capacitance and energy loss by intercoiling helix windings and using shielding layers to block the electrical field between the substrate and the exterior wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a thick metal is disposed on the top of the inductor to reduce conductor loss, then the Q value is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent transitions from planar spiral windings to three-dimensional helical windings. The helix structure allows the conductor to be positioned at different heights above the substrate, creating a vertical dimension that increases the distance between the conductor and substrate. This dimensional change reduces parasitic capacitance and substrate interference without requiring excessively thick metal layers, thereby resolving the contradiction between reducing conductor loss and maintaining structural simplicity.
Solution Approach 2:
The patent employs composite material structures combining different metal layers with specific thicknesses and configurations. By using optimized metal compositions and multi-layer constructions, the inductor achieves reduced conductor loss through material properties rather than simply increasing metal thickness, thus avoiding the penalty of increased device complexity.
2Area of stationary object
If the inductor is disposed near the silicon substrate, then the integration density is improved, but the parasitic capacitance increases and the Q value deteriorates
Solution Approach 1:
The helical winding structure elevates the conductor into the third dimension, positioning it at a greater vertical distance from the silicon substrate. This vertical separation reduces the electric field coupling between the conductor and substrate, thereby minimizing parasitic capacitance. The inductor maintains its compact footprint on the substrate while achieving reduced parasitic effects through the vertical dimension.
Solution Approach 2:
The patent employs nested shielding structures where ground planes or shielding layers are positioned between the helical conductor and the substrate. These nested shielding elements are integrated within the overall inductor structure, creating a compact configuration that reduces parasitic capacitance without significantly increasing the horizontal footprint, thus maintaining good integration density.
3Loss of energy
If the metal thickness is increased to reduce conductor loss, then the Q value is improved, but the improvement becomes insignificant beyond a certain thickness
Solution Approach 1:
Instead of continuously increasing metal thickness to reduce conductor loss, the patent utilizes the vertical dimension through helical windings to achieve the same goal. The helix structure naturally positions the conductor farther from lossy substrate regions, providing continued improvement in conductor loss reduction without the diminishing returns associated with simply thickening metal layers. This approach maintains fabrication feasibility.
Solution Approach 2:
The patent optimizes multiple parameters including helix diameter, pitch, number of turns, and metal thickness simultaneously. By changing these geometric parameters rather than relying solely on increased metal thickness, the design achieves reduced conductor loss with moderate metal dimensions that remain within standard fabrication capabilities, avoiding the point of diminishing returns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the Q value of the inductor, reducing energy loss and enhancing performance across various frequency ranges, including RF circuits, while maintaining compatibility with existing fabrication processes.
Implementation Method 1
a shielding structure, comprising a first shielding layer and a second shielding layer; a first shielding layer is disposed between the first exterior wire and the substrate corresponding to a projection of the first exterior wire; a second shielding layer is disposed between the second exterior wire and the substrate corresponding to a projection of the second exterior wire
Implementation Method 2
an inductor has energy storage and discharge functions through electromagnetic conversion, so the inductor can be used as an element for stabilizing current
Data Source
AI summary
An inductor structure including a first helix winding, a second helix winding, and a shielding structure is provided. The first helix winding has a first exterior wire connecting with a first interior wire in series. The second helix winding and the first helix winding are intercoiled about a symmetric plane. The second helix winding has a second exterior wire connecting with a second interior wire in series and connects with the first interior wire. The shielding structure includes a first shielding layer disposed between the first exterior wire and the substrate corresponding to a projection of the first exterior wire and a second shielding layer disposed between the second exterior wire and the substrate corresponding to a projection of the second exterior wire. The first shielding layer and the second shielding layer are grounded individually, and are in symmetry about the symmetric plane.


