Inert Gas Recycling in Semiconductor Substrate Processing

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Solution Overview

Problem

Current substrate processing apparatuses in semiconductor manufacturing consume excessive inert gases, particularly nitrogen (N2), which is inefficient and costly.

Innovation Solution

The apparatus incorporates a second inert gas supply system that recycles and reuses inert gases discharged from the transfer chamber, supplying them to the processing chamber or its downstream portions, thereby reducing overall consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If inert gas is supplied to the transfer chamber and processing chamber, then the substrate processing can be performed, but the consumption amount of inert gas increases

Engineering Contradiction:

Improvesubstrate processing qualityVSAvoidinert gas consumption

Core Design Contradiction:

ReliabilityVSLoss of substance

Solution Approach 1:

The patent recovers inert gas discharged from the transfer chamber exhaust system and reuses it in the processing chamber. The exhaust gas from the transfer chamber is collected through the first exhauster, and the inert gas component is recovered and supplied to the processing chamber via the second inert gas supplier, preventing waste of the inert gas while maintaining processing quality

Inventive Principle:

Principle #34Discarding and recovering

Solution Approach 2:

The system uses its own exhaust inert gas to supply the processing chamber, creating a self-sustaining gas circulation system. The inert gas discharged from the transfer chamber serves itself by being reused in the processing chamber, reducing external gas consumption

Inventive Principle:

Principle #25Self-service

2Manufacturing precision

If fresh inert gas is continuously supplied to the processing chamber, then the processing gas quality is maintained, but the cost and consumption increase

Engineering Contradiction:

Improveprocessing gas qualityVSAvoidinert gas quantity

Core Design Contradiction:

Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent establishes a continuous inert gas circulation system where gas is continuously recovered from the transfer chamber exhaust and continuously supplied to the processing chamber. This continuous circulation maintains gas quality without the need for continuous fresh gas supply, reducing overall consumption while preserving processing precision

Inventive Principle:

Principle #20Continuity of useful action

Data Source

PatentUS20230091762A1Substrate processing apparatus, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium

Publication Date: 2023.03.23 KOKUSAI DENKI KK

AI summary

There is provided is a technique includes: at least one processing chamber in which a substrate is processed; a processing gas supplier that supplies a processing gas to the at least one processing chamber; a transfer chamber communicable with the at least one processing chamber; a first inert gas supplier that supplies an inert gas to the transfer chamber; a first exhauster that discharges an atmosphere from the transfer chamber; and a second inert gas supplier that supplies the inert gas discharged by the first exhauster to the at least one processing chamber or a downstream portion of the at least one processing chamber.