Inert Gas Vent Line for Semiconductor Substrate Processing
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Solution Overview
Problem
In semiconductor device manufacturing, foreign matter adsorbed on substrates during processing can lead to poor performance, short service life, and low production yield due to agitation and contamination within the processing chamber, particularly caused by pressure fluctuations during substrate processing.
Innovation Solution
A substrate processing apparatus and method that employs a processing chamber with an inert gas feeding system, including an inert gas vent line and valves to control gas flow, ensuring inert gas is exhausted without entering the chamber, and cyclic processing cycles with alternating gas flows to suppress pressure fluctuations and prevent foreign matter agitation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrate processing is performed in a processing chamber, then thin film formation on substrate is achieved, but foreign matter is adsorbed on substrate due to agitation and pressure fluctuations
Solution Approach 1:
The patent applies preliminary action by introducing inert gas into the processing chamber before substrate processing begins. This preliminary inert gas introduction creates a protective atmosphere that prevents foreign matter adsorption on the substrate during subsequent processing steps, addressing the contamination issue before it occurs
Solution Approach 2:
The patent implements an inert atmosphere by continuously or periodically introducing inert gas (such as nitrogen or argon) into the processing chamber during substrate processing. This inert environment prevents oxidation and adsorption of foreign matter on the substrate, directly resolving the technical contradiction between achieving thin film formation and preventing contamination
2Productivity
If processing gas is fed into processing chamber during substrate processing, then thin film formation is enabled, but pressure fluctuations occur causing foreign matter agitation
Solution Approach 1:
The patent uses inert gas as an intermediary substance that mediates between the processing gas and the substrate environment. The inert gas acts as a buffer that stabilizes pressure fluctuations while allowing processing gas to perform its film-forming function, thus maintaining both productivity and pressure stability
Solution Approach 2:
The patent applies parameter changes by controlling the flow rate, pressure, and timing of inert gas introduction to counterbalance pressure changes caused by processing gas feeding. By dynamically adjusting these parameters, the system maintains stable overall pressure while enabling continuous substrate processing
3Quantity of substance
If film formation is performed on processing chamber walls during CVD process, then coating is achieved, but contaminants are generated by film peeling
Solution Approach 1:
The patent extracts or removes the harmful effect of film formation on chamber walls by introducing inert gas that prevents uncontrolled film deposition on surfaces other than the substrate. The inert gas creates a controlled environment where film formation is directed primarily to the substrate, preventing contaminant-generating film peeling from chamber walls
Solution Approach 2:
The inert atmosphere prevents spontaneous film formation on processing chamber walls by suppressing chemical reactions between processing gas and wall surfaces. This selective inhibition of film deposition on non-substrate surfaces eliminates the source of contaminant particles that would otherwise peel off during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents foreign matter adsorption on substrates by minimizing pressure fluctuations and contamination, resulting in improved semiconductor device performance and yield.
Implementation Method 1
an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber
Implementation Method 2
a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line
Implementation Method 3
an exhaust line that exhausts an inside of the processing chamber
Implementation Method 4
suppress agitation of foreign matter present in the processing chamber
Data Source
AI summary
A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.