InFO Package Dielectric Stack for Large High-Bandwidth Packages

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Solution Overview

Problem

The semiconductor industry faces challenges in reducing the physical size of semiconductor devices while maintaining performance and reliability, particularly in achieving high bandwidth and thermal management for large package applications.

Innovation Solution

The integration of an integrated fan out (InFO) process with an Ajinomoto build up film (ABF) or prepreg lamination process, along with the use of a composite redistribution layer and polyimide top dielectric layers, enables the creation of smaller and more efficient semiconductor devices with improved electrical performance and thermal expansion matching that of printed circuit boards.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If semiconductor process node is reduced to sub-20 nm to increase integration density, then more components can be integrated into a given area, but manufacturing complexity and difficulty increase significantly

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent transitions from planar 2D integration to 3D stacked architecture, where multiple semiconductor dies are vertically bonded together. This dimensional change allows continued scaling and increased functionality without further reducing the lateral feature size, thereby avoiding the manufacturing complexity associated with sub-20 nm processes while maintaining high integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the semiconductor device into multiple separate dies that are fabricated independently and then bonded together in a stacked configuration. Each die can be optimized and manufactured separately using mature process nodes, avoiding the need for all components to be manufactured at difficult sub-20 nm nodes, thus reducing overall manufacturing complexity.

Inventive Principle:
Principle #1Segmentation

2Volume of moving object

If stacked and bonded semiconductor devices are used to reduce physical size, then device footprint is reduced, but bonding process complexity increases

Engineering Contradiction:
Improvedevice footprintVSAvoidbonding process complexity
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The patent employs a carrier substrate that serves multiple functions: it provides mechanical support during handling, enables precise alignment of multiple dies through alignment marks, facilitates bonding through controlled temperature and pressure, and allows for subsequent release of the completed stacked device. This multi-functional carrier reduces the need for separate specialized equipment for each bonding step, simplifying the overall process.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent pre-forms alignment marks and bonding interfaces on the carrier substrate before die attachment. The carrier is prepared with specific structural features that guide die placement and ensure proper alignment, eliminating the need for complex real-time alignment procedures during bonding, thus reducing bonding process complexity.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If larger package sizes are used for high bandwidth applications, then electrical performance improves, but board-level reliability stresses and manufacturing difficulty increase

Engineering Contradiction:
Improveelectrical performanceVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent achieves high bandwidth electrical performance by stacking dies vertically with short inter-die connection paths, effectively creating high-speed connections in the vertical dimension rather than requiring large lateral trace lengths. This reduces the package footprint while maintaining low signal propagation delay and high bandwidth, avoiding the manufacturing difficulties associated with large package handling and assembly.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250062173A1Semiconductor device and method of manufacture
Publication Date: 2025.02.20 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250062173A1 patent drawing
  • US20250062173A1 patent drawing
  • US20250062173A1 patent drawing

AI summary

An integrated fan out package is utilized in which the dielectric materials of different redistribution layers are utilized to integrate the integrated fan out package process flows with other package applications. In some embodiments an Ajinomoto or prepreg material is utilized as the dielectric in at least some of the overlying redistribution layers.