Infrared Photoelectric Biosensor Using Self-Biased Peak Current Detection
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Solution Overview
Problem
Conventional photoelectric elements used for near-infrared damage detection face challenges in performance degradation and complexity in production, requiring advanced materials and processes to achieve effective photon absorption and carrier separation for accurate damage analysis.
Innovation Solution
A bio-sensing device with a photoelectric element comprising a p-type semiconductor layer, an n-type semiconductor layer forming a PN junction, and a transparent current collector, which generates photocurrent using self-bias and measures peak currents from infrared pulsed light to analyze target damage, along with a manufacturing method involving titanium dioxide and silver nanowire formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a narrow band gap material such as indium, gallium, arsenic, lead, gallium, arsenic is used as an active layer material for detecting the near-infrared ray wavelength, then the detection capability in the near-infrared range is improved, but the manufacturing complexity and production difficulty increase significantly due to requiring very complex and precise processes including doping, etching and epitaxy
Solution Approach 1:
The patent changes the material parameters by using silicon (a common semiconductor) instead of narrow band gap materials like indium gallium arsenide. It achieves near-infrared detection by modifying the silicon band structure through boron doping and creating a specific heterostructure with titanium dioxide, thereby detecting near-infrared light without requiring complex narrow band gap material fabrication processes
Solution Approach 2:
The patent creates a functional copy of narrow band gap material detectors using silicon-based heterostructure. By designing a specific device architecture with boron-doped silicon and titanium dioxide layers, it replicates the near-infrared detection function without using the actual narrow band gap materials, thus avoiding their manufacturing complexity
2Device complexity
If a conventional photoelectric element is used, then the device structure is simple, but the performance is extremely degraded in the near-infrared NIR range due to inability to generate appropriate self-bias, insufficient photon absorption inducing carriers, and poor carrier separation
Solution Approach 1:
The patent creates a composite heterostructure by combining boron-doped silicon with titanium dioxide. This composite structure generates appropriate self-bias at the interface, enhances photon absorption in the near-infrared range, and improves carrier separation efficiency, thereby achieving high performance without excessive structural complexity
Solution Approach 2:
The patent applies local quality by creating a specific heterostructure interface between boron-doped silicon and titanium dioxide. The unique properties at this interface generate the necessary self-bias and enhance carrier separation, while the bulk materials maintain their individual advantages, achieving high performance with controlled structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device accurately detects and visualizes damage by measuring peak current magnitudes, enabling efficient and precise analysis of target deformation through generated mapping images, with improved performance and simplified production.
Implementation Method 1
the photoelectric element configured to receive the infrared pulsed light which has transmitted through the target, and to generate photocurrent based on the received light
Implementation Method 2
development of a device capable of generating an appropriate self-bias, generating sufficient photon absorption inducing carriers, separating carriers, and collecting carriers
Data Source
AI summary
A bio-sensing device having a photoelectric element is disclosed. The bio-sensing device includes an infrared pulse generator configured to irradiate infrared pulsed light to a target; the photoelectric element configured to receive the infrared pulsed light which has transmitted through the target, and to generate photocurrent based on the received light; and a sensing element configured to measure a magnitude of either a first peak current of the photocurrent corresponding to a leading edge of the infrared pulsed light or a second peak current of the photocurrent corresponding to a trailing edge of the infrared pulsed light, and to analyze the target based on the measurement result.