Infrared Heating of Substrate in Processing Chamber

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Solution Overview

Problem

Substrate processing systems face challenges in maintaining substrate temperature during film deposition, leading to potential bending or bowing due to internal stress in films when they are subjected to higher temperature processes after deposition at lower temperatures.

Innovation Solution

Incorporating an infrared light source within the processing chamber to heat the substrate to at least 500 degrees Celsius during film deposition, using a grid with an open area of approximately 88% to transmit infrared light effectively, and employing a vacuum source and radio frequency generator circuit to strike plasma with a precursor, while maintaining a controlled environment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If substrate temperature is maintained at high levels during film deposition, then film stress is minimized and substrate bending is prevented, but heating system complexity and energy consumption increase

Engineering Contradiction:

Improvesubstrate flatnessVSAvoidheating system complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent replaces conventional mechanical contact heaters with an infrared heating system that uses optical energy transmission through a transparent window. The infrared source emits radiation that passes through the window and directly heats the substrate, eliminating the need for complex thermal contact mechanisms while achieving uniform high-temperature maintenance during deposition

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces a transparent window as an intermediary component that allows infrared radiation to pass through and reach the substrate. This window mediates between the infrared source and the substrate, enabling non-contact heating while maintaining chamber integrity and process control

Inventive Principle:

Principle #24Intermediary (Mediator)

2Device complexity

If conventional heating methods are used, then system complexity is lower, but substrate temperature uniformity and film stress control deteriorate

Engineering Contradiction:

Improveheating system complexityVSAvoidsubstrate temperature uniformity

Core Design Contradiction:

Device complexityVSTemperature

Solution Approach 1:

The patent substitutes infrared radiation heating for conventional conductive or convective heating methods. The infrared source emits radiation that penetrates through the transparent window and directly heats the substrate surface, providing superior temperature uniformity across the substrate area without the complexity of distributed heating elements

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the heating mechanism from thermal conduction/convection to radiant heating in the infrared spectrum. This parameter change enables direct energy transfer to the substrate, achieving uniform temperature distribution and precise thermal control during film deposition processes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures that the film is deposited on the substrate at a temperature that minimizes stress properties, preventing bending or bowing during subsequent processes by maintaining the substrate at a consistent high temperature throughout the deposition and subsequent processing stages.

Implementation Method 1

an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate

Methodology Applied

Scientific EffectInfrared radiation: Infrared Radiation

Implementation Method 2

a radio frequency generator circuit configured to apply the ground potential and the radio frequency potential to the grid and the pedestal and to strike plasma with the precursor

Methodology Applied

Scientific EffectPlasma: Plasma

Data Source

PatentUS20220199379A1High temperature heating of a substrate in a processing chamber

Publication Date: 2022.06.23 LAM RES CORP

AI summary

A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the substrate, the pedestal configured to be electrically connected to one of a ground potential and a radio frequency potential; a grid that is coupled to the upper portion and that is configured to be electrically connected to the other one of the ground potential and the radio frequency potential; a window that covers an opening in the upper portion; and an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate. The second surface of the substrate is opposite the first surface of the substrate.