Infrared Laser Debonding for Temporary Wafer Support Lamination

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Solution Overview

Problem

Existing methods for temporarily bonding semiconductor wafers to supports during polishing fail to provide adequate adhesion during processing while allowing easy removal without damage, leading to potential breakage or deformation of thinned wafers.

Innovation Solution

A laminate debonding method using a first adhesive layer cured through hydrosilylation and a second adhesive layer with an aromatic ring that allows infrared laser light, enabling debonding by irradiation with infrared laser light to reduce adhesion at the interface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a single adhesive layer is used to temporarily bond the semiconductor wafer to the support, then the bonding is simple, but it cannot provide both high adhesion during polishing and easy removal without damage

Engineering Contradiction:

Improveadhesion strength during polishingVSAvoidwafer breakage or deformation during removal

Core Design Contradiction:

StrengthVSObject-affected harmful factors

Solution Approach 1:

The adhesive system is divided into two separate adhesive layers: a first adhesive layer that provides strong bonding during polishing, and a second adhesive layer that enables easy removal. This segmentation allows each layer to be optimized for its specific function, resolving the contradiction between strong bonding and easy removal.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent uses a composite adhesive structure with two different adhesive materials having distinct properties. The first adhesive has high bonding strength for polishing stability, while the second adhesive has controlled adhesion for easy removal. This composite approach allows simultaneous achievement of both strong bonding and damage-free removal.

Inventive Principle:

Principle #40Composite materials

2Productivity

If excessive force is applied to remove the support, then the support can be removed quickly, but the thinned semiconductor wafer may be broken or deformed

Engineering Contradiction:

Improvesupport removal speedVSAvoidwafer integrity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The adhesive system transitions from a static, uniform adhesion property to a dynamic, layered adhesion structure. The second adhesive layer is specifically designed to allow controlled detachment with minimal force, enabling quick support removal while protecting the fragile thinned wafer from damage.

Inventive Principle:

Principle #15Dynamics

3Stability of the object's composition

If the adhesive is designed for strong bonding, then the wafer remains stable during polishing, but it becomes difficult to remove the support without damaging the wafer

Engineering Contradiction:

Improvewafer stability during polishingVSAvoidsupport removal ease

Core Design Contradiction:

Stability of the object's compositionVSEase of manufacture

Solution Approach 1:

By segmenting the adhesive system into two layers with different functions, the first layer ensures wafer stability during polishing while the second layer enables easy support removal. This segmentation resolves the contradiction between stability and ease of removal.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the adhesive system have different properties: the first adhesive layer has high bonding strength for stability, while the second adhesive layer has controlled adhesion for easy removal. This local differentiation of properties allows simultaneous achievement of both stability and ease of manufacture.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Facilitates easy and damage-free removal of the support substrate by absorbing laser light, ensuring high adhesion during processing and low adhesion during detachment, thus protecting the semiconductor wafer.

Implementation Method 1

a second adhesive layer which is obtained by use of an adhesive (B) formed of a polymer adhesive having an aromatic ring in at least one of a main chain and a side chain and which allows passage of infrared laser light; and a second step of irradiating the laminate with infrared laser light from a second substrate side for debonding the second substrate at the interface between the first and second adhesive layers

Methodology Applied

Scientific EffectInfrared laser light absorption: Absorption (EM radiation)

Implementation Method 2

the first adhesive layer is an adhesive layer obtained by curing an adhesive (A) containing a component which is cured through hydrosilylation

Methodology Applied

Scientific EffectHydrosilylation curing: Chemical Bonding

Data Source

PatentUS12516221B2Laminate peeling method, laminate, and laminate production method

Publication Date: 2026.01.06 NISSAN CHEM CORP

AI summary

A laminate debonding method includes producing a laminate by joining a first substrate formed of a semiconductor-forming substrate to a second substrate formed of a support substrate which allows passage of infrared laser light, by the mediation of a first adhesive layer provided on the first substrate and a second adhesive layer provided on the second substrate, wherein the first adhesive layer is obtained by curing an adhesive (A) containing a component which is cured through hydrosilylation, and the second adhesive layer is obtained by use of an adhesive (B) formed of a polymer adhesive having an aromatic ring in at least one of a main chain and a side chain and which allows passage of infrared laser light; and irradiating the laminate with infrared laser light from a second substrate side for debonding the second substrate at the interface between the first and second adhesive layers.