Infrared LED Horizontal Structure for Head-Mounted Display Packaging

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Solution Overview

Problem

Infrared LEDs with a vertical structure face packaging challenges due to the p-type and n-type electrodes being on the same side, which does not meet requirements for specific applications like head-mounted displays.

Innovation Solution

A light-emitting diode (LED) design featuring a semiconductor epitaxy stack with a reflection layer, a first pad electrode, and a second pad electrode, where the semiconductor epitaxy stack includes a first type semiconductor layer, an active layer, and a second type semiconductor layer, with the electrodes arranged to allow for efficient electrical connection and light emission, and a horizontal structure is achieved by removing a portion of the epitaxy stack to place both pad electrodes on the same side.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a vertical structure is used for the infrared LED, then the photoelectric performance is stable, but the packaging requirements cannot be met for specific applications

Engineering Contradiction:
Improvephotoelectric performance stabilityVSAvoidpackaging adaptability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent transforms the traditional vertical structure into a horizontal structure by changing the spatial arrangement of the semiconductor epitaxy stack. The first and second pad electrodes are both disposed on the first surface of the stack, with the active layer positioned between them, creating a planar configuration that enables flexible packaging while preserving photoelectric performance

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If both pad electrodes are disposed on the same side of the semiconductor epitaxy stack, then packaging requirements are met, but the structural complexity increases

Engineering Contradiction:
Improvepackaging adaptabilityVSAvoidstructural complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the electrode regions by defining a first electrode region and a second electrode region on the first surface of the semiconductor epitaxy stack. This segmentation allows the first and second pad electrodes to be independently positioned and connected to respective contact electrodes, simplifying the overall structure while meeting packaging requirements

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances luminous efficiency and allows for effective packaging in applications such as head-mounted displays by ensuring both electrodes are on the same side, improving brightness and reliability.

Implementation Method 1

an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

The reflection layer is disposed on the second surface opposite to the first surface

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS20240047618A1Light-emitting diode, light-emitting diode package, and light-emitting device
Publication Date: 2024.02.08 TIANJIN SANAN OPTOELECTRONICS
  • US20240047618A1 patent drawing
  • US20240047618A1 patent drawing
  • US20240047618A1 patent drawing

AI summary

A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.