Infrared Optical Element Wiring Layout for ESD Short-Circuit Resistance
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Solution Overview
Problem
Infrared optical elements face issues with electric field concentration and short-circuiting due to electrostatic discharge (ESD) when high voltage is applied to pad electrodes, especially when photoelectric conversion elements are closely arranged for high sensitivity and luminous efficiency.
Innovation Solution
The infrared optical element is designed with a specific wiring pattern that connects multiple photoelectric conversion elements in series, incorporating a mesa structure and insulating portions to manage the creepage distance and potential difference, ensuring 0.140≤(Vb/Va)≤0.261 and 3.5 μm≤D≤6.0 μm, where Vb is the maximum potential difference and D is the creepage distance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If photoelectric conversion elements are arranged closely together to improve sensitivity and luminous efficiency, then the infrared optical element can be made smaller with higher performance, but electric field concentration occurs between adjacent elements causing short-circuiting due to ESD
Solution Approach 1:
The patent applies different structural characteristics to different regions of the infrared optical element. Specifically, insulating portions are selectively provided between adjacent photoelectric conversion elements at locations where electric field concentration occurs, while other regions maintain close spacing for high sensitivity. This local differentiation allows the element to be compact overall while providing ESD protection where needed.
Solution Approach 2:
The patent introduces insulating portions as intermediary structures between adjacent photoelectric conversion elements. These insulating portions act as mediators that prevent direct electrical contact and reduce electric field concentration, thereby preventing short-circuiting due to ESD while allowing the elements to remain closely spaced for high sensitivity and compact size.
2Reliability
If insulating portions are provided between adjacent photoelectric conversion elements to prevent ESD short-circuiting, then reliability improves, but the element size increases and sensitivity decreases
Solution Approach 1:
The insulating portions are strategically placed only at specific locations where electric field concentration occurs between adjacent photoelectric conversion elements, rather than uniformly across all interfaces. This localized approach provides ESD protection while minimizing the impact on overall element size and maintaining high sensitivity for infrared detection.
Solution Approach 2:
The patent optimizes the dimensions and positioning parameters of the insulating portions to achieve the right balance between reliability and sensitivity. By carefully controlling the size, shape, and location of insulating portions, the design ensures adequate ESD protection while minimizing interference with the photoelectric conversion function and maintaining compact element size.
3Reliability
If a large number of photoelectric conversion elements are connected in series to achieve high sensitivity, then performance improves, but the complexity of managing electric field distribution and preventing ESD increases
Solution Approach 1:
The patent divides the infrared optical element into multiple discrete photoelectric conversion elements connected in series, with insulating portions provided between adjacent elements. This segmentation approach allows each element to be independently designed and positioned, simplifying the management of electric field distribution while providing systematic ESD protection throughout the array.
Solution Approach 2:
The patent establishes specific parameter ranges for the wiring pattern, including the ratio of maximum potential difference to applied voltage (Vb/Va) and the creepage distance of insulating portions. By defining these parameters within optimal ranges, the design simplifies the complexity of managing electric field distribution in series-connected elements while ensuring reliable ESD protection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the resistance to short-circuiting caused by ESD, maintaining high sensitivity and luminous efficiency while minimizing the element's size, thus improving the reliability and performance of the infrared optical element.
Implementation Method 1
each of the multiple unit elements includes: a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer; and a second conductive semiconductor layer disposed on the active layer
Implementation Method 2
0.140≤(Vb/Va)≤0.261 is satisfied, if a voltage Va is applied between the multiple pad electrodes, and Vb represents a maximum potential difference between unit elements adjacent vertically or horizontally
Data Source
AI summary
An infrared optical element with improved resistance to short-circuiting caused by ESD is provided by devising a wiring pattern that connects a large number of photoelectric conversion elements in series. The infrared optical element includes a substrate (10), multiple unit elements (20), and multiple pad electrodes (40). Each unit element includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which configure a mesa structure. 70 or more and 200 or less electrically connected unit elements, of the multiple unit elements, are arranged to electrically connect between the multiple pad electrodes, each of which is located at an end portion. 0.140≤(Vb/Va)≤0.261 is satisfied, if a voltage Va is applied between the multiple pad electrodes, and Vb represents a maximum potential difference between unit elements adjacent vertically or horizontally.