Infrared Phosphor Light-Emitting Device for Si Detector Sensitivity
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Solution Overview
Problem
Existing infrared light-emitting devices face issues with poor temperature characteristics, low versatility, and complex structures due to the use of GaAs-based compound semiconductors, and existing phosphors have limitations such as long emission wavelengths beyond detector range, magnetic properties affecting light emission, narrow band emission, and long afterglow times.
Innovation Solution
A light-emitting device comprising a semiconductor light-emitting element that emits ultraviolet or visible light and a phosphor that absorbs this light to emit in the infrared region, with an emission peak wavelength between 750 to 1050 nm and a half width of over 50 nm, using Cr or Eu2+/Sm2+ as activator elements and a magnet plumbite structure, to achieve high sensitivity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a phosphor with emission wavelength around 1500 nm is used, then infrared light emission is achieved, but the wavelength is too long for Si detector detection range
Solution Approach 1:
The patent changes the emission wavelength parameter of the phosphor from around 1500 nm to 750-1050 nm by selecting specific phosphor materials (Y3Al5O12:Ce, YAG:Ce, Er) and adjusting their composition ratios, making the emission wavelength suitable for Si detector detection while maintaining infrared light emission capability
2Illumination intensity
If a phosphor that emits strong visible light is used, then light emission intensity is improved, but the structure becomes complicated due to the need for filters
Solution Approach 1:
The patent applies local quality by selecting phosphor materials with specific emission characteristics (Y3Al5O12:Ce, YAG:Ce, Er) that emit primarily in the infrared region at 750-1050 nm with minimal visible light emission, thereby eliminating the need for filters while maintaining high light emission intensity in the desired wavelength range
3Temperature
If GaAs-based compound semiconductor is used, then infrared light emission is achieved, but temperature characteristics are poor and versatility is low
Solution Approach 1:
The patent uses composite materials by combining a GaN-based compound semiconductor light-emitting element with specific infrared phosphor materials (Y3Al5O12:Ce, YAG:Ce, Er) to create a hybrid system that leverages the high temperature characteristics and versatility of GaN while achieving infrared light emission through phosphor conversion
4Illumination intensity
If a phosphor with narrow band emission is used, then emission intensity at peak wavelength is improved, but the applicable detection range is limited
Solution Approach 1:
The patent applies dynamics by adjusting the composition ratios of phosphor materials (Y3Al5O12:Ce, YAG:Ce, Er) to control the emission band width, enabling the emission spectrum to be dynamically tuned to match different detector sensitivity characteristics and application requirements while maintaining high emission intensity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides an infrared light-emitting device with a wide band emission in the 750 to 1050 nm range, high detection sensitivity, and reduced afterglow time, eliminating the need for complex filters and improving light emission efficiency and versatility.
Implementation Method 1
a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region
Data Source
AI summary
An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.