Infrared Detector Pixel Structure with Multilayer Conductive Trenches
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Solution Overview
Problem
Conventional infrared detector pixel structures have low sensitivity, are structurally complex, and costly due to the use of expensive thermal elements for detecting infrared radiation.
Innovation Solution
A silicon-based infrared detector pixel structure featuring a conductive metal region, an infrared detecting element, and a multilayer conductive beam unit with trenches that transmit electrical signals in a circuitous path, reducing device area and enhancing integration density and sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a thermal element with higher sensitivity is used, then detection sensitivity is improved, but material cost increases
Solution Approach 1:
The patent changes the material parameter from expensive high-sensitivity thermal elements to cost-effective amorphous silicon or vanadium oxide thermistors. The sensitivity compensation is achieved by optimizing the circuit design and signal processing parameters rather than relying on expensive materials.
2Reliability
If conventional thermal element structure is used, then detection function is achieved, but structural complexity increases
Solution Approach 1:
The patent extracts and eliminates the complex thermal element structure from the detector, retaining only the essential infrared sensing function. The simplified thermistor-based structure removes unnecessary structural complexity while maintaining detection capability through optimized circuit design.
3Reliability
If conventional signal transmission path is used, then electrical signal is transmitted, but device area increases
Solution Approach 1:
The patent transitions the signal transmission from a conventional planar path to a three-dimensional circuitous path through multilayer conductive trenches. This vertical dimension utilization allows compact signal routing that reduces the horizontal device footprint while maintaining reliable electrical connection.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves detection sensitivity and signal-to-noise ratio while reducing material costs and structural complexity by optimizing the transmission path of electrical signals through the conductive beam unit, thereby enhancing the overall performance of the infrared detector.
Implementation Method 1
an infrared detecting element located above the silicon substrate for detecting infrared light and generating electrical signal
Implementation Method 2
a conductive beam unit electrically connected to the infrared detecting element for transmitting the electrical signal generated by the infrared detecting element to the conductive metal region
Data Source
AI summary
The present invention provides an infrared detector pixel structure and manufacturing method thereof. The structure comprises a conductive metal region on surface of the silicon substrate; an infrared detecting element located above the silicon substrate for detecting infrared light and generating electrical signal; and a conductive beam unit electrically connected to the infrared detecting element for transmitting the electrical signal to the conductive metal region; the conductive beam unit includes at least one conductive beam layer and multilayer conductive trench arranged in a vertical direction; two ends of the conductive beam are respectively in contact with two layers of conductive trenches whose bottom portions are not in the same horizontal plane; the infrared detecting element is in contact with one conductive trench one conductive beam; the conductive metal region is in contact with bottom portion of the other layer of conductive trench therein; the electrical signal is transmitted along the height direction of the conductive trench and the conductive beam, so as to be transmitted downward to the conductive metal region in a circuitous path in the vertical direction.