Infrared Semiconductor Defect Inspection for Bubble Detection
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Solution Overview
Problem
Current semiconductor defects inspection apparatuses face challenges in increasing scanning speed and optimizing the inspection procedure to enhance the precision and quality of silicon wafer production.
Innovation Solution
A semiconductor defects inspection apparatus comprising a carrier, an optical system with an infrared image capturing device and a processing unit, which uses an illumination beam to produce an image beam that is transformed into image information for analysis, improving the inspection effect and optical quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If an area-scan camera is used to inspect the inner layer of a silicon wafer, then the inspection quality is maintained, but the scanning speed is limited
Solution Approach 1:
The patent changes the wavelength parameter of the inspection beam from visible light to infrared light. This parameter change enables the use of infrared cameras that have higher frame rates and faster readout speeds compared to traditional area-scan cameras, thereby increasing scanning speed and inspection capacity while maintaining inspection quality
Solution Approach 2:
The patent replaces the traditional mechanical scanning approach with an optical field-based infrared imaging approach. By using infrared light and infrared-sensitive cameras, the system achieves faster data acquisition without mechanical movement, thus improving scanning speed and productivity
2Productivity
If the inspection procedure is optimized to increase scanning speed, then productivity improves, but measurement precision may be compromised
Solution Approach 1:
The patent utilizes the specific interaction between infrared light and bubble defects in silicon wafers. Bubble defects have different infrared absorption characteristics compared to the silicon substrate, allowing for precise detection. The infrared wavelength parameter is selected to maximize the contrast between defects and the substrate, maintaining measurement precision while enabling faster inspection
Solution Approach 2:
The patent introduces infrared light as an intermediary to enhance the contrast between bubble defects and the silicon wafer substrate. This intermediary enables precise defect detection by exploiting the differential infrared absorption properties, maintaining measurement precision while allowing for optimized scanning speeds
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively increases the inspection capacity and production efficiency by enhancing the optical quality and inspection effect, allowing for better detection of defects such as bubble defects in semiconductor wafers.
Implementation Method 1
The optical system provides an illumination beam to the object under inspection to produce an image beam
Implementation Method 2
The infrared image capturing device is adapted for receiving the image beam to be transformed into an image information
Data Source
AI summary
A semiconductor defects inspection apparatus for inspection of bubble defects of an object is provided. The semiconductor defects inspection apparatus includes a carrier, an optical system, an infrared image capturing device, and a processing unit. The carrier is adapted for bearing the object. The optical system provides an illumination beam to the object to produce an image beam. The infrared image capturing device is disposed on a transmission path of the image beam. The infrared image capturing device is adapted for receiving the image beam to be transformed into an image information. The processing unit is electrically connected to the infrared image capturing device and adapted for analyzing the object according to the image information.