Infrared Sensor Cantilever Switch Array CMOS Compatibility
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Solution Overview
Problem
The existing infrared sensor technology faces challenges in process compatibility between MEMS and CMOS, limiting the improvement of infrared sensor structure and manufacturing technology.
Innovation Solution
An infrared sensor structure featuring a cantilever switch array with cantilever beams of varying vertical heights, composed of a laminated structure with different thermal expansion coefficients, and a thermal isolating layer, which quantifies infrared signal intensity through switch activation and incorporates a pressure-controlled heat sink for efficient heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a MEMS micro-bridge structure with negative sensitive layer is used to detect infrared light, then infrared detection function is achieved, but process compatibility with CMOS is poor
Solution Approach 1:
The patent changes the detection mechanism from resistance change (negative temperature coefficient) to capacitance change. The cantilever beam's deformation due to thermal expansion directly modulates the capacitance between the beam and fixed electrodes, enabling CMOS-compatible fabrication while maintaining infrared detection capability.
Solution Approach 2:
The patent replaces the electrical resistance-based detection system with a mechanical deformation-based capacitance detection system. The cantilever beam's mechanical deformation in response to thermal stress serves as the detection mechanism, which is more compatible with standard CMOS processes.
2Ease of manufacture
If cantilever beams with uniform structure are used, then manufacturing is simplified, but detection sensitivity and quantification capability are reduced
Solution Approach 1:
The patent segments the cantilever beam into multiple sections with different materials and thermal expansion coefficients. This segmentation allows different parts of the beam to respond differently to thermal stimuli, enabling multi-level detection and quantification of infrared signal intensity while maintaining manufacturability through standard multi-layer fabrication processes.
Solution Approach 2:
The patent applies local quality by giving different sections of the cantilever beam different material properties (thermal expansion coefficients). This allows specific regions to have optimized responses to thermal stimuli, enhancing the overall detection capability and signal quantification while remaining compatible with localized material deposition techniques.
3Measurement precision
If thermal isolation is enhanced to improve detection accuracy, then measurement precision improves, but heat dissipation capability deteriorates
Solution Approach 1:
The patent introduces a dynamically controllable heat dissipation system using Peltier elements that can be activated based on detection needs. The thermal isolation structure maintains detection accuracy, while the controllable heat dissipation mechanism activates when needed to prevent thermal accumulation, balancing both requirements through dynamic control rather than static design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances infrared signal detection by varying cantilever beam deformations, maintains thermal isolation, and is compatible with existing semiconductor CMOS processes, allowing for improved sensitivity and manufacturing efficiency.
Implementation Method 1
deformations of different cantilever beams produced by absorbing infrared signal are different from each other
Implementation Method 2
the cantilever beam comprises an infrared absorptive layer, a first thermal deformed layer and a second thermal deformed layer
Implementation Method 3
a thermal isolating layer is set between the cantilever beam and a supporting column, and the thermal isolating layer is also set between the cantilever beam and the switch
Implementation Method 4
a pressure-controlled heat sink is set on the semiconductor substrate, the pressure-controlled heat sink is connected to the metal layer and controlled by a voltage for dissipating heat generated on the cantilever beam
Data Source
AI summary
The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.