Infrared Sensor Series Circuit for High Signal Voltage
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Solution Overview
Problem
Conventional infrared light sensors have limitations in achieving high signal voltage and signal-to-noise ratio, particularly due to high capacitance which affects their miniaturization and interaction with electronic readout components.
Innovation Solution
The design involves multiple pyroelectric sensor chips connected in series on a substrate membrane, with each chip having a pyroelectric layer made of lead-zirconate-titanate, and a series circuit configuration that reduces total capacitance while maintaining high voltage differences, allowing for efficient signal readout with low noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple sensor chips are connected in series to increase total voltage difference, then signal voltage is improved, but device complexity increases
Solution Approach 1:
The infrared light sensor is divided into multiple sensor chips (first sensor chip, second sensor chip, etc.) connected in series. Each chip generates a voltage difference when exposed to infrared light, and the series connection sums these voltage differences to achieve high total signal voltage without requiring a single large complex chip
Solution Approach 2:
Multiple sensor chips are combined in a series circuit configuration where the head electrode of one chip connects to the base electrode of the next chip. This merging of multiple simple units creates a composite structure that achieves high voltage output while maintaining individual chip simplicity
2Volume of moving object
If sensor chips are miniaturized to reduce device size, then device size is reduced, but signal voltage decreases
Solution Approach 1:
Instead of using a single large sensor chip, the system segments the sensing function across multiple smaller chips connected in series. Each miniaturized chip generates a moderate voltage, but the series connection multiplies the total voltage output, enabling small device size with high signal voltage
Solution Approach 2:
The solution transitions from a single-plane large chip to a multi-chip series arrangement, effectively adding a dimensional aspect to the voltage generation. The series connection creates a voltage summation along the chain of chips, compensating for the reduced area of individual miniaturized chips
3Power
If pyroelectric layer area is increased to improve signal, then signal voltage is improved, but device size increases
Solution Approach 1:
The pyroelectric sensing function is segmented across multiple chips with smaller individual pyroelectric layers. The series connection of these chips sums their voltage outputs, achieving high total signal voltage without requiring any single pyroelectric layer to be large, thus maintaining compact device size
4Measurement precision
If capacitance is reduced to improve signal-to-noise ratio, then signal-to-noise ratio is improved, but signal voltage decreases
Solution Approach 1:
The total capacitance is segmented across multiple sensor chips connected in series. The reciprocal sum of individual capacitances results in a total capacitance lower than any individual chip, improving signal-to-noise ratio. Meanwhile, the series voltage summation compensates for the reduced capacitance effect on signal voltage
Solution Approach 2:
The system changes the capacitance parameter by using multiple smaller capacitance units in series rather than a single large capacitance unit. This parameter change achieves lower total capacitance for improved signal-to-noise ratio while the series voltage addition maintains adequate signal voltage level
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables a miniaturized infrared light detector with improved signal-to-noise ratio and reduced signal losses, facilitating applications such as thermal imaging and gas detection with high precision.
Implementation Method 1
a pyroelectric layer made of pyroelectrically sensitive material arranged between said electrode layers. This material is ferroelectric lead-zirconate-titanate (PZT)... a respective voltage difference is present between the head electrode and the base electrode of each layer element when said layer elements are exposed with infrared light
Implementation Method 2
The electrode layers comprise platinum or a chromium-nickel alloy absorbing the thermal radiation
Data Source
AI summary
An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can be tapped as the sum of the individual voltage differences of the layer elements (11).