InGaAsP Cladding Roughness for Single-Peak Emission
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Solution Overview
Problem
Bonding-type semiconductor light-emitting elements exhibit multiple emission peaks in addition to the central peak, which can interfere with applications such as sensors and surveillance cameras, limiting their effectiveness.
Innovation Solution
A semiconductor light-emitting element with a cladding layer made of InGaAsP, featuring a roughened surface on the light extraction side with a surface roughness of 0.03 μm or more and a random irregularity pattern, which reduces multipeaks to achieve a single peak in the emission spectrum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a bonding-type semiconductor light-emitting element is used to improve light extraction efficiency, then external extraction efficiency is improved, but multiple emission peaks appear in the emission spectrum
Solution Approach 1:
The patent applies parameter changes by modifying the surface roughness of the light extraction face. Specifically, the surface roughness is controlled to be 0.03 μm or more, which changes the optical parameters of the surface to suppress interference effects that cause multipeaks while maintaining high light extraction efficiency. This parameter adjustment resolves the contradiction between improving extraction efficiency and eliminating harmful multipeaks.
2Manufacturing precision
If the surface roughness is increased to reduce multipeaks, then emission spectrum purity is improved, but light extraction efficiency may be affected
Solution Approach 1:
The patent precisely controls the surface roughness parameter within a specific range (0.03 μm or more) to achieve optimal balance. This controlled parameter change suppresses interference multipeaks improving spectrum purity, while the roughness is kept within limits that maintain effective light extraction, thus resolving the contradiction between spectrum purity and extraction efficiency.
3Manufacturing precision
If a roughened surface is formed on the cladding layer to eliminate multipeaks, then emission spectrum quality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent simplifies the manufacturing process by focusing on controlling a single parameter - the surface roughness of the light extraction face. Rather than introducing complex additional structures or processes, the invention achieves multipeak suppression through precise control of surface roughness (0.03 μm or more), making the manufacturing process manageable while improving emission spectrum quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The surface roughening of the cladding layer effectively eliminates secondary emission peaks, enhancing the light emission output power and maintaining high efficiency even during continuous operation.
Implementation Method 1
a surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern
Data Source
AI summary
A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 μm or more and has a random irregularity pattern.