InGaN Quantum Well Light-Emitting Element with Random Net Base
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Solution Overview
Problem
Semiconductor light-emitting elements face challenges in achieving high color rendering properties with broad light-emitting wavelength bandwidth and high light-emission intensity, often resulting in non-uniform light colors and complex manufacturing processes.
Innovation Solution
A semiconductor light-emitting element is designed with a first semiconductor layer, a light-emitting functional layer featuring a quantum well structure with InGaN composition that increases as it approaches the second semiconductor layer, and a base layer with a random net shape to enhance light-emitting wavelength coverage and intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If multiple active layers with different compositions are laminated to widen the light-emitting wavelength bandwidth, then color rendering properties are improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The invention applies local quality by creating a single active layer with spatially varying In composition (higher In content near the p-type layer, lower In content near the n-type layer). This gradient composition allows different regions of the same layer to emit at different wavelengths, achieving broad spectral coverage without laminating multiple layers. The base layer with random net shape also provides local variation in stress strain, further broadening the emission spectrum.
Solution Approach 2:
The invention changes the compositional parameter (In content) continuously within the active layer rather than using discrete layers. The In composition is configured to increase as the distance to the second semiconductor layer (p-type) decreases, creating a gradient that shifts the emission wavelength across the visible spectrum. This parameter variation within a single layer achieves the same effect as multiple laminated layers but with simpler manufacturing.
2Illumination intensity
If a layer with uneven structure is inserted to broaden the light-emitting wavelength bandwidth, then color rendering properties are improved, but manufacturing process complexity and crystallinity degradation occur
Solution Approach 1:
The invention merges the functions of the uneven structure layer and the composition gradient into a single integrated active layer. The base layer with random net shape is formed as part of the active layer structure itself, and the In composition gradient is established during the same growth process. This combination eliminates the need for separate insertion steps while achieving both broad spectral width and maintaining manufacturing simplicity.
Solution Approach 2:
The base layer with random net shape is formed preliminarily during the active layer growth process, before the quantum well structure is deposited. This preliminary formation of the uneven structure allows subsequent layers to conform to it, creating the desired stress strain distribution and wavelength broadening effect without requiring post-growth processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves a broad spectral width and high light-emitting intensity, improving color rendering properties and reducing manufacturing complexity by utilizing a quantum well structure with varying In composition and a base layer with stress-strain induced random net shape.
Implementation Method 1
a quantum well structure layer formed from at least one quantum well layer and at least one barrier layer that are formed on the base layer. Each of the at least one quantum well layer has an InGaN composition and is configured to increase an In composition thereof as a distance to the second semiconductor layer decreases
Implementation Method 2
The wavelength of the light emitted from the active layer (i.e., emitted light color) is determined by the band gap of the semiconductor material that constitutes the active layer
Implementation Method 3
The light-emitting layer has a base layer with a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape
Implementation Method 4
Emission of light by a semiconductor light-emitting element is induced by, in the active layer, binding (recombination) of an electron and hole injected into the element through electrodes
Data Source
AI summary
A semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a light-emitting functional layer including a light-emitting layer formed on the first semiconductor layer; and a second semiconductor layer that is of a conductivity type opposite to that of the first semiconductor layer and is formed on the light-emitting functional layer. The light-emitting layer has a base layer with a plurality of base segments that have a composition subject to stress strain from the first semiconductor layer and are formed in a random net shape, and a quantum well structure layer formed from at least one quantum well layer and at least one barrier layer that are formed on the base layer. Each of the at least one quantum well layer has an InGaN composition so that the In composition increases as the distance to the second semiconductor layer decreases.