InGaN Red LED Quantum Wells for Efficient 600-750 Nm Emission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor light emitting devices, particularly red-light emitting diodes, face challenges in achieving efficient light emission in the desired wavelength range and integration into display technologies.
Innovation Solution
The development of red-light emitting diodes comprising indium gallium nitride layers with specific compositions and structures, along with III-nitride and GaN barrier layers, and the use of nanowire devices or quantum wells, allows for efficient light emission between 600 and 750 nm, and integration into direct view display devices with multiple wavelength-emitting diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional light emitting devices are used, then manufacturing is simpler, but light emission efficiency in the red wavelength range (600-750 nm) is insufficient
Solution Approach 1:
The light emitting region is divided into multiple quantum wells (one or two quantum wells as specified) with different indium compositions, allowing each well to contribute to light emission in the red wavelength range. This segmentation enables efficient light emission while managing the complexity through modular design
Solution Approach 2:
The device uses composite material structures including indium gallium nitride layers with specific compositions (AlyGa(1-y)N where y is in range from 0.3 to 1.0), III-nitride layers, and GaN barrier layers. These composite materials enable efficient red light emission while the structured composition manages device complexity
2Illumination intensity
If red-light emitting diodes with specific indium gallium nitride compositions are implemented, then color reproduction is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies precise compositional parameters for the indium gallium nitride layers (AlyGa(1-y)N where y is in range from 0.3 to 1.0) to achieve red light emission at 600-750 nm. By defining specific parameter ranges for indium composition, the patent enables color reproduction enhancement while providing manufacturing guidance to manage precision requirements
Solution Approach 2:
Different regions of the light emitting region have different indium compositions optimized for their specific function. The quantum wells contain higher indium content for red light emission, while barrier layers have lower indium content for carrier confinement. This local quality differentiation enhances color reproduction while allowing standardized manufacturing processes for each layer type
3Productivity
If nanowire devices or quantum well structures are used, then light emission efficiency improves, but device fabrication complexity increases
Solution Approach 1:
The light emitting region consists of one or two quantum wells with specific indium gallium nitride compositions. This segmentation into discrete quantum well structures enables efficient light emission while providing a repeatable, standardized unit that can be manufactured using established semiconductor fabrication processes
Solution Approach 2:
The quantum well structure serves multiple functions: it confines carriers, enables efficient radiative recombination, and produces red light emission. By designing a multi-functional quantum well structure, the patent achieves high productivity while using a single versatile component that can be integrated into standard manufacturing workflows
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-efficiency light emission and integration of red-light emitting diodes into direct view displays, enhancing color reproduction and display quality.
Implementation Method 1
a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross
Data Source
AI summary
A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.