InGaP Quantum Dot Core-Shell Structure for Blue Emission

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Solution Overview

Problem

Current quantum dots used in high-definition optical members and electronic apparatuses face challenges in achieving high photoluminescence quantum yield and blue light emission with a maximum wavelength of 490 nm or less, while avoiding the use of toxic cadmium and minimizing gallium loss during shell formation.

Innovation Solution

A quantum dot structure comprising a core with indium, gallium, and phosphorus, surrounded by a shell made from group II-VI, III-V, or III-VI semiconductor compounds, with specific mole ratios to optimize absorption and emission properties, and a manufacturing method involving precursor compositions and heat treatment to control the shell formation and prevent gallium loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If quantum dots are designed to emit blue light with maximum wavelength of 490 nm or less, then color purity is improved, but photoluminescence quantum yield decreases

Engineering Contradiction:
Improvecolor purityVSAvoidphotoluminescence quantum yield
Core Design Contradiction:
Illumination intensityVSReliability

Solution Approach 1:

The patent employs composite material structures including core-shell quantum dots where the core contains InGaP semiconductor material and the shell contains ZnSe or ZnS semiconductor materials. This composite structure allows the core to provide blue light emission with high color purity while the shell protects the core and enhances the photoluminescence quantum yield by reducing surface defects and preventing gallium oxidation.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes specific compositional parameters including maintaining Ga/(In+Ga) ratio between 0.02-0.18 in the core, controlling (In+Ga)/P ratio between 0.8-1.3, and adjusting shell thickness to 0.5-2.0 nm. These parameter changes enable simultaneous achievement of high color purity (maximum emission wavelength ≤490 nm) and high photoluminescence quantum yield (≥80%).

Inventive Principle:
Principle #35Parameter changes

2Object-affected harmful factors

If cadmium-free quantum dots are used, then environmental safety is improved, but achieving high photoluminescence quantum yield becomes more difficult

Engineering Contradiction:
Improveenvironmental safetyVSAvoidphotoluminescence quantum yield
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The patent replaces toxic cadmium with environmentally safe alternative materials such as InGaP core combined with ZnSe or ZnS shells. These cadmium-free composite structures achieve photoluminescence quantum yield of 80% or higher, proving that environmental safety and high performance are not mutually exclusive.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The core-shell composite structure with InGaP core and ZnSe/ZnS shell provides both environmental safety (cadmium-free) and high photoluminescence quantum yield. The shell material protects the core from oxidation and surface defects, enabling high efficiency emission without using toxic cadmium.

Inventive Principle:
Principle #40Composite materials

3Reliability

If shell formation is performed to protect the core, then quantum yield is improved, but gallium loss occurs during the process

Engineering Contradiction:
Improvequantum yieldVSAvoidgallium loss
Core Design Contradiction:
ReliabilityVSLoss of substance

Solution Approach 1:

The patent performs preliminary protective actions by forming a thin ZnSe shell (0.5-1.5 nm) first, then adding a ZnS shell (0.5-2.0 nm) afterward. This sequential shell formation approach protects the InGaP core from gallium loss during the shell formation process while maintaining high quantum yield. The first ZnSe shell acts as a barrier that prevents excessive gallium diffusion.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent controls the shell formation parameters including limiting ZnSe shell thickness to 0.5-1.5 nm and ZnS shell thickness to 0.5-2.0 nm, and performing shell formation at controlled temperatures (250-350°C). These parameter changes minimize gallium loss during shell formation while still achieving the protective effect needed for high quantum yield.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resulting quantum dots exhibit enhanced absorbance, high photoluminescence quantum yield, and reduced gallium loss, enabling the production of high-quality optical members and electronic apparatuses with improved light conversion efficiency and color purity.

Implementation Method 1

Quantum dots, which are semiconductor nanocrystals with a quantum confinement effect, may have different energy bandgaps by control of the size and composition of the nanocrystals, and thus may emit light of one or more suitable emission wavelengths

Methodology Applied
Scientific EffectQuantum confinement effect:

Implementation Method 2

the core may include indium (In), gallium (Ga), and phosphorus (P)... exhibit enhanced absorbance, high photoluminescence quantum yield

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 3

the shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or any combination thereof

Methodology Applied
Scientific EffectOxidation prevention: Oxidation

Data Source

PatentUS20230329026A1Quantum dot, method of manufacturing quantum dot, optical member including quantum dot, and electronic apparatus including quantum dot
Publication Date: 2023.10.12 SAMSUNG DISPLAY CO LTD
  • US20230329026A1 patent drawing
  • US20230329026A1 patent drawing
  • US20230329026A1 patent drawing

AI summary

An electronic apparatus including the quantum dot, wherein the quantum dot may include a core and a shell covering at least a portion of the core, wherein the core may include indium (In), gallium (Ga), and phosphorus (P), the shell may include a group II-VI semiconductor compound, a group III-V semiconductor compound, a group III-VI semiconductor compound, or a combination thereof, in the core and the shell, the number of moles of Ga relative to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn+MGa)) may be in a range of about 0.02 to about 0.18, and in the core and the shell, the sum of the number of moles of In and the number of moles of Ga relative to the number of moles of P ((MIn+MGa)/MP) may be in a range of about 1 to about 1.2.