InGaSiO Oxide Semiconductor Silicon Concentration
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Solution Overview
Problem
Oxide semiconductors used in thin film transistors, such as those with InGaZnO, experience degradation in electrical characteristics and resistance due to hydrogen sintering, especially at high temperatures, leading to unstable transistor operations.
Innovation Solution
An oxide semiconductor composition including indium, gallium, and silicon (InGaSiO) with a silicon concentration between 7 and 11 atomic percent is used, which offers higher bond dissociation energy and resistance to oxygen deficiency, maintaining stable characteristics even under hydrogen sintering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen sintering is performed to improve electrical characteristics, then resistance is lowered, but transistor characteristics are degraded
Solution Approach 1:
The patent changes the compositional parameters of the oxide semiconductor by incorporating silicon at specific concentrations (7-11 atomic percent) to modify the material's response to hydrogen sintering, thereby maintaining stable electrical characteristics while avoiding the harmful effects that degrade transistor performance
Solution Approach 2:
The patent creates a composite oxide semiconductor material containing indium, gallium, zinc, and silicon in specific proportions. This composite structure provides both the electrical characteristics needed for low resistance and the stability required to prevent transistor characteristic degradation during hydrogen sintering
2Reliability
If high temperature heat treatment is applied to reduce resistance, then electrical conductivity improves, but oxygen deficiency increases causing instability
Solution Approach 1:
The patent modifies the compositional parameters by adding silicon to the oxide semiconductor, which changes the material's thermal and chemical stability properties, enabling it to maintain oxygen content and resist composition instability even under high temperature heat treatment conditions
Solution Approach 2:
The patent uses silicon, an abundant and cost-effective element, to provide long-term stability against oxygen deficiency. The silicon atoms act as structural stabilizers that prevent oxygen loss during high temperature processing, effectively creating a durable resistance to composition degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The InGaSiO composition provides improved sintering resistance and maintains excellent transistor operations and electrical characteristics, even at high temperatures, ensuring stable and high carrier mobility.
Implementation Method 1
A concentration of the silicon in the oxide semiconductor is not less than 7 atomic percent and not more than 11 atomic percent... offers higher bond dissociation energy and resistance to oxygen deficiency
Data Source
AI summary
According to one embodiment, an oxide semiconductor includes indium, gallium, and silicon. A concentration of the silicon in the oxide semiconductor is not less than 7 atomic percent and not more than 11 atomic percent.