InGaAsP Laser Power Converter for 1550nm Efficiency
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Solution Overview
Problem
Current laser power converters (LPCs) have limited efficiency when operating at wavelengths beyond 810nm, particularly at 1550nm, due to lower conversion efficiencies and safety concerns related to eye and skin safety, as well as attenuation through optical fibers and the atmosphere.
Innovation Solution
A laser power converter device with an InGaAsP active region lattice matched to an InP substrate, optimized with specific InGaAsP alloy compositions (In y Ga 1-y As x P 1-x) to maximize absorption efficiency at 1550nm, incorporating a Distributed Bragg Reflector and a design that minimizes defect-related recombination and quantum deficit losses, ensuring high conversion efficiency and safety.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If photovoltaic devices are designed for wavelengths beyond 810nm (e.g., 1550nm), then eye and skin safety is improved and attenuation through optical fibers is reduced, but conversion efficiency deteriorates
Solution Approach 1:
The patent changes the material composition parameters of the photovoltaic device by using InGaAsP alloys with specific lattice matching to InP substrates. This allows the device to be optimized for 1550nm wavelength operation while maintaining high conversion efficiency through precise control of alloy composition and crystal structure
Solution Approach 2:
The patent employs composite material structures including InGaAsP active regions lattice-matched to InP substrates. This composite approach combines the advantages of different materials to achieve both high efficiency at 1550nm and safety benefits, overcoming the limitations of single-material designs
2Ease of manufacture
If conventional electrical wiring is used for power transmission, then ease of installation is improved, but electromagnetic interference and sparking risks worsen
Solution Approach 1:
The patent replaces conventional electrical wiring (mechanical conductive system) with optical fiber-based power transmission. Electrical power is converted to optical signals transmitted through fiber optic cables, eliminating electromagnetic interference and sparking risks while maintaining reliable power delivery
3Reliability
If laser power converters operate at 1550nm wavelength, then safety and transmission losses are improved, but device complexity increases due to material composition requirements
Solution Approach 1:
The patent manages complexity by establishing precise parameter specifications for InGaAsP alloy composition and lattice matching to InP substrates. These well-defined parameters provide clear manufacturing targets, making the complex material requirements tractable through systematic control of composition and crystal structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves conversion efficiencies of at least 44% at 1kW/m^2, potentially exceeding 50%, while being eye and skin-safe, with minimal attenuation through silica-based fibers and the atmosphere, and maintains efficiency up to 30°C above ambient temperature.
Implementation Method 1
Devices for converting electromagnetic energy into electrical energy have been in existence for some decades now. These devices are often known as photovoltaic devices.
Implementation Method 2
the active region being arranged to absorb photons of electromagnetic radiation having an associated wavelength of about 1550nm
Implementation Method 3
V. Andreev et. al. reports efficiencies of above 50% being achieved for GaAs-based photovoltaic devices at a wavelength in the region of 820nm to 850nm. This document describes photovoltaic devices formed on a GaAs substrate which include a Distributed Bragg Reflector formed of alternating layers of AlAs and GaAs
Data Source
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AI summary
A Laser Power Converter (LPC) device (1) comprises an anti-reflection coating (10), a window layer (20), an active region (30), an electron blocking layer (40), a Distributed Bragg Reflector (DBR) (50) and a substrate (60). The device further comprises an anode (70), a cathode (80) and insulating layers (90). The active region (30) is formed of indium gallium arsenide phosphide (InGaAsP), with the proportion of chemical elements in the InGaAsP layers being lnyGa1-yAsxP1-x, and is designed to convert electromagnetic radiation having a wavelength of 1.55μm into electrical energy. However, the exact composition of the InGaAsP is chosen to have a band-gap wavelength at slightly above 1.55μm because in operation the device heats up and the band-gap shifts to longer wavelengths. To obtain a suitable band-gap the composition may be lnyGa1-yAsxP1-x, where x = 0.948, 0.957, 0.965, 0.968, 0.972 or 0.976 and y = 0.557, 0.553, 0.549, 0.547, 0.545 or 0.544 respectively.