Selective Inhibitor Layer Removal for Semiconductor Surface Exposure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge in manufacturing semiconductor devices is to achieve high integration and compactness while maintaining performance and reliability, particularly in the context of reduced design rules and the need for advanced configurations.
Innovation Solution
A method involving the formation of inhibitor layers on semiconductor surfaces, followed by selective removal using heat treatment, allowing for the exposure and deposition of interest layers, which includes pretreatment processes like H2 plasma treatment and the use of specific materials like 4-trifluoromethyl benzaldehyde to enhance selectivity and binding properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If inhibitor layers are formed conformally on multiple surfaces and selective removal is performed, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The inhibitor layer formation process is segmented by surface type - treating metal nitride surfaces differently from non-metal nitride surfaces. This allows selective removal on specific surfaces while maintaining inhibitor layers on others, achieving precise surface exposure control without requiring completely different processes for each surface
Solution Approach 2:
Inhibitor layers are formed in advance on all surfaces before selective removal. This preliminary action establishes a protective framework that enables subsequent selective exposure of specific surfaces (like the second surface) while preserving others, improving manufacturing precision through pre-planned surface differentiation
2Manufacturing precision
If heat treatment process is used for selective inhibitor layer removal, then manufacturing precision is improved, but energy consumption increases
Solution Approach 1:
The heat treatment process utilizes parameter changes in the inhibitor layers - specifically, the different thermal stability characteristics of inhibitor layers on metal nitride versus non-metal nitride surfaces. By controlling temperature parameters, selective desorption is achieved on non-metal nitride surfaces while metal nitride surface inhibitor layers remain stable, improving precision while managing energy consumption through targeted parameter optimization
3Reliability
If pretreatment processes like H2 plasma are applied, then reliability is improved, but process time increases
Solution Approach 1:
Pretreatment processes like H2 plasma are applied locally and selectively - specifically on metal nitride surfaces where they provide significant reliability benefits for subsequent inhibitor layer formation. Non-metal nitride surfaces skip this pretreatment step, reducing overall process time while maintaining reliability where it is most critical
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the manufacturing process by enabling precise control over surface exposure and layer formation, leading to improved semiconductor device performance and reliability through selective desorption and deposition techniques.
Implementation Method 1
Pretreating a first surface of a metal nitride layer with H2 plasma
Implementation Method 2
exposing the second surface and a first portion of the first surface by selectively removing the second inhibitor layer from among the first inhibitor layer and the second inhibitor layer through a heat treatment process
Implementation Method 3
selective desorption
Data Source
AI summary
A method of manufacturing a semiconductor device is provided. The method includes providing a first layer having a first surface and a second layer having a second surface orthogonal to the first surface in a vertical direction, forming an inhibitor layer conformally on the first surface and the second surface, exposing the second surface by selectively removing the inhibitor layer on the second surface among the first surface and the second surface, the exposing of the second surface may include selectively removing an edge portion of the inhibitor layer on the first surface, the edge portion contacting the second surface, and forming an interest layer on the exposed second surface.