Selective Plating via Inhibitor-Modified Electrolyte
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Solution Overview
Problem
In semiconductor device processing, the existing hard mask materials like SiN and TiN have limitations, and the use of SiO2 can lead to lattice defects and impurities, causing unintended plating on non-plateable material portions during the plating process, resulting in defects.
Innovation Solution
A plating method and apparatus that selectively apply a catalyst to plateable material portions on a substrate and use a plating liquid with an inhibitor to prevent precipitation on non-plateable material portions, ensuring accurate plating layer formation without defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a catalyst is applied selectively to plateable material portions, then the plating layer can be formed selectively on intended areas, but catalyst may adhere to lattice defects or impurities on non-plateable material portions causing unintended plating and defects
Solution Approach 1:
An inhibitor is introduced as an intermediary substance in the plating liquid that selectively suppresses plating on non-plateable material portions. The inhibitor acts as a mediator between the catalyst and the non-plateable material, preventing unwanted plating while allowing intended plating to proceed normally.
Solution Approach 2:
The chemical composition of the plating liquid is modified by adding an inhibitor, which changes the plating parameters. This parameter change allows the system to distinguish between plateable and non-plateable portions, enabling selective plating while preventing defects on non-plateable material portions.
2Reliability
If conventional hard mask materials like SiN or TiN are used, then high adhesivity and heat resistance are achieved, but material selection is limited and processing complexity increases
Solution Approach 1:
The plating layer is designed to serve multiple functions: it acts as both the deposited functional layer and the hard mask for subsequent etching processes. This multi-functionality eliminates the need for separate hard mask materials, allowing versatile material selection for the plating layer while maintaining the required hard mask properties.
Solution Approach 2:
The functional layer and hard mask layer are merged into a single plating layer. By forming the plating layer on the SiO2 film with catalyst treatment, the same layer serves both as the functional plating layer and as the etching hard mask, simplifying the material selection and reducing processing steps.
3Adaptability or versatility
If SiO2 film is used as the base material, then various plating materials can be selected, but lattice defects and impurities cause catalyst adhesion on non-plateable portions leading to defects
Solution Approach 1:
The inhibitor serves as an intermediary that blocks the interaction between the catalyst and lattice defects or impurities on the SiO2 film. This prevents unintended plating on non-plateable portions while maintaining the versatility of using SiO2 as the base material for various plating applications.
Solution Approach 2:
The inhibitor converts the harmful effect of lattice defects and impurities (which would cause unintended plating) into a controlled situation where these defects are effectively masked. The presence of the inhibitor transforms the potential defect source into a non-issue, allowing the SiO2 film to be used safely.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses defect generation on non-plateable material portions, allowing for precise control of the plating process and dense formation of the plating layer on intended areas, enhancing processing accuracy.
Implementation Method 1
imparting a catalyst selectively to the plateable material portion by performing a catalyst imparting processing on the substrate
Implementation Method 2
forming a plating layer selectively on the plateable material portion by supplying a plating liquid onto the substrate
Implementation Method 3
The plating liquid contains an inhibitor which suppresses the plating layer from being precipitated on the non-plateable material portion
Data Source
AI summary
A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.