Inhibitor-Assisted Step Coverage in High-Aspect-Ratio Apertures
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Solution Overview
Problem
Existing semiconductor deposition processes face challenges in achieving uniform step coverage on high aspect ratio (HAR) structures, often resulting in non-uniform gap filling, voids, and weak points.
Innovation Solution
The method involves sequentially or simultaneously exposing a substrate to a vapor of an inhibitor, a vapor of a precursor, and a vapor of a co-reactant during vapor deposition processes, where the inhibitor contains O, N, S, P, B, C, F, Cl, Br, or I, to improve step coverage on HAR apertures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional vapor deposition processes are used on high aspect ratio structures, then deposition can be performed with standard process conditions, but step coverage is non-uniform and contains voids and weak points
Solution Approach 1:
An inhibitor molecule is introduced as an intermediary substance that temporarily adsorbs onto the substrate surface, particularly at the bottom of high aspect ratio apertures. This inhibitor layer modifies the surface chemistry to control precursor adsorption, enabling uniform film deposition by preventing excessive adsorption at the aperture bottom while maintaining adsorption on sidewalls and top surfaces
Solution Approach 2:
The process changes the chemical parameters of the deposition system by introducing the inhibitor molecule with specific functional groups (O, N, S, P, B, C, F, Cl, Br, or I). This chemical modification alters the surface reactivity and adsorption characteristics, transforming the deposition behavior from non-uniform to conformal across the high aspect ratio structures
2Volume of moving object
If deposition is performed on high aspect ratio apertures, then material can be deposited on deep structures, but non-uniform gap filling occurs
Solution Approach 1:
The inhibitor acts as a mediator that selectively modifies surface properties within the aperture. By adsorbing preferentially at the aperture bottom and controlling precursor access, it enables uniform material distribution throughout the deep aperture volume, achieving complete and uniform gap filling
Solution Approach 2:
The inhibitor provides local quality modification by creating different surface conditions at different locations within the aperture. The inhibitor concentration and adsorption strength vary spatially, with higher inhibition at the aperture bottom and reduced inhibition on sidewalls and top, enabling location-specific control of deposition uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the step coverage of films deposited on HAR structures, achieving conformal deposition with no voids or weak points, even on structures with high aspect ratios, thereby improving the integration and performance of semiconductor devices.
Implementation Method 1
exposing the substrate to a vapor of an inhibitor, a vapor of a precursor and a vapor of a co-reactant
Implementation Method 2
allowing the film with a desired step coverage being deposited on the surface of the HAR apertures through a vapor deposition process
Data Source
AI summary
Disclosed is a method for improving step coverage of a film deposited on high aspect ratio (HAR) apertures in a substrate. The method comprises i) sequentially or simultaneously exposing the substrate to a vapor of an inhibitor, a vapor of a precursor and a vapor of a co-reactant; and ii) allowing the film with a desired step coverage being deposited on the surface of the HAR apertures through a vapor deposition process, wherein the inhibitor contains O, N, S, P, B, C, F, Cl, Br, or I.