Inhomogeneous Semiconductor Regions for DUV LED Light Extraction
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Solution Overview
Problem
Current deep ultraviolet light emitting diodes (DUV LEDs) suffer from low efficiency due to light trapping and absorption within the device, particularly in semiconductor layers and contact regions.
Innovation Solution
A semiconductor layer with inhomogeneous regions, including transparent, reflective, and conductive regions, is introduced, where these regions are strategically arranged within the semiconductor structure to enhance light extraction and conductivity, featuring vertically and horizontally conductive regions and omnidirectional mirrors to manage radiation effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional homogeneous semiconductor layers are used, then the device structure is simple and easy to manufacture, but light extraction efficiency is low due to light trapping and absorption
Solution Approach 1:
The semiconductor layer is divided into multiple discrete inhomogeneous regions with different optical and electrical properties (transparent regions, reflective regions, conductive regions) rather than using a uniform homogeneous layer. This segmentation allows each region to perform its specific function optimally while collectively improving light extraction efficiency.
Solution Approach 2:
Different regions within the semiconductor layer are assigned different local properties: transparent regions for light transmission, reflective regions for light redirection, and conductive regions for electrical conductivity. This local differentiation of properties enables simultaneous optimization of optical and electrical performance in specific areas.
2Loss of energy
If inhomogeneous regions are introduced to improve light extraction, then light extraction efficiency increases, but device structure becomes more complex
Solution Approach 1:
Multiple functional regions (transparent, reflective, conductive) are merged into a single semiconductor layer structure, allowing the layer to simultaneously perform optical transmission, light redirection, and electrical conduction functions that would otherwise require separate components.
Solution Approach 2:
The semiconductor layer is designed with multi-functionality by incorporating regions that can perform different functions (optical transparency, reflection, electrical conduction) within the same layer structure, reducing the need for additional separate components.
3Loss of energy
If transparent and reflective regions are added to manage radiation, then light extraction improves, but manufacturing process becomes more difficult
Solution Approach 1:
The refractive index and optical properties of different regions are adjusted by modifying material composition parameters (such as aluminum content in AlGaN layers) to create transparent and reflective regions with desired optical characteristics, enabling radiation management through material parameter optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of inhomogeneous regions in the semiconductor layer significantly improves light extraction efficiency and conductivity, addressing the issues of light trapping and absorption, thereby enhancing the performance of DUV LEDs.
Implementation Method 1
These regions can include transparent and/or reflective regions configured based on radiation having a target wavelength
Implementation Method 2
The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions
Data Source
AI summary
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.