Injection-Locked Ring Laser on SOI for Cryogenic Data Links
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Solution Overview
Problem
Current semiconductor laser technologies, such as Ti:LiNbO3 modulators and VCSELs, face limitations in achieving high modulation bandwidth and energy efficiency for cryogenic optical data links due to high power consumption and alignment challenges, which hinder the development of ultra-high-speed, low-power data transmission systems.
Innovation Solution
The implementation of strongly injection-locked unidirectional whistle-geometry microring lasers integrated on a silicon-on-insulator (SOI) substrate, utilizing a hybrid III-V/silicon platform with a single-frequency master laser for direct injection current modulation, enables high-speed and energy-efficient data transmission by optimizing the injection coupling rate and reducing thermal constraints.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If Ti:LiNbO3 EO modulators are used to achieve high modulation bandwidth, then modulation frequency is improved, but half-wave voltage becomes too high requiring signal amplification
Solution Approach 1:
The patent combines the master laser and slave ring laser into a single integrated device on an SOI substrate, allowing direct injection locking and modulation without external amplification. This merging eliminates the need for high half-wave voltage modulators while achieving >100 GHz bandwidth through the injection-locked slave laser.
Solution Approach 2:
The patent replaces the external EO modulator system with a directly modulated injection-locked laser system. Instead of using mechanical/electrical modulators with high voltage requirements, the system uses optical injection locking to achieve high-speed modulation with low power consumption.
2Speed
If VCSELs are used for optical data links, then bandwidth is achieved, but power consumption becomes too high for energy-efficient operation
Solution Approach 1:
The patent changes the operating parameters of the laser system by using injection locking to achieve high-speed modulation without the high power consumption of VCSELs. The slave laser is locked to the master laser, enabling >100 GHz bandwidth with much lower power consumption than conventional VCSEL-based systems.
3Speed
If external EO modulators are used for data transmission, then modulation speed is improved, but alignment precision requirements become too stringent
Solution Approach 1:
By integrating the master laser and slave ring laser on the same SOI substrate with built-in waveguide coupling, the patent eliminates the need for precise external alignment between separate components. The monolithic integration ensures stable, repeatable coupling while achieving high-speed modulation through injection locking.
4Extent of automation
If standard SFQ circuits are used for cryogenic applications, then digital processing is achieved, but power dissipation becomes too high
Solution Approach 1:
The patent replaces conventional high-power SFQ circuit interconnects with an optical data link system. By using injection-locked lasers for data transmission, the system achieves high-speed digital communication with much lower power dissipation than electrical interconnects, enabling energy-efficient cryogenic computing systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach provides ultra-high-speed, low-power, and energy-efficient directly modulated laser sources with modulation bandwidths exceeding 100 GHz, suitable for cryogenic optical data links, while minimizing thermal and alignment issues, thus enhancing the performance of cryogenic data transmission systems.
Implementation Method 1
Optical injection locking has been actively researched for its potential to improve ultrahigh frequency performance of semiconductor lasers. The technique uses the output of one laser (master) to optically lock another laser (slave).
Implementation Method 2
passive silicon rib, ridge, or buried waveguides monolithically integrated on the same SOI substrate and used to collect light from an external laser source and deliver it to the hybrid III-V/silicon ring laser
Data Source
AI summary
The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.