Injector Flow Rate Ratio Control for Uniform Film Deposition
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Solution Overview
Problem
Existing gas processing apparatuses face challenges in achieving uniform film deposition on substrates due to variations in flow rates and thermal decomposition rates of processing gases, leading to non-uniformity in film characteristics across substrates.
Innovation Solution
The processing apparatus incorporates an injector with multiple introduction ports, allowing for adjustment of the flow rate ratio of processing gas introduced into the injector, which enables control over the distribution of flow rates and thermal decomposition rates across the substrates, ensuring uniform gas supply and film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is introduced through a single inlet in existing processing apparatus, then the structure is simple, but the flow rate distribution across gas injection holes becomes non-uniform, leading to non-uniform film deposition
Solution Approach 1:
The gas injection system is segmented into multiple introduction ports (first and second introduction ports) instead of using a single inlet. Each port introduces processing gas into the injector, allowing independent control of gas flow paths. This segmentation enables uniform distribution of processing gas across multiple gas injection holes, resolving the non-uniform film deposition issue while maintaining reasonable structural complexity.
2Productivity
If the flow rate of processing gas is increased to improve deposition speed, then productivity increases, but thermal decomposition rate varies across substrates, worsening film uniformity
Solution Approach 1:
The system provides different flow rates of processing gas to different regions (upstream and downstream substrates) through the multiple introduction ports. The first introduction port supplies gas that reaches upstream substrates, while the second introduction port supplies gas that reaches downstream substrates. This local quality adjustment ensures that each substrate receives the appropriate amount of processing gas, maintaining uniform film characteristics even at higher overall deposition speeds.
3Manufacturing precision
If multiple introduction ports are added to achieve uniform gas distribution, then film uniformity improves, but the device complexity and control difficulty increase
Solution Approach 1:
The system controls the flow rate ratio parameter between the first and second introduction ports to achieve uniform gas distribution. By adjusting this single parameter (flow rate ratio), the system can optimize gas supply to different substrates without requiring complex independent control of each gas path. This parameter-based control simplifies operation while maintaining the ability to achieve uniform inter-plane gas supply distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for the adjustment of inter-plane uniformity of gas supply, shifting the peak thermal decomposition rate and improving the uniformity of film characteristics across substrates, thereby enhancing the consistency of film deposition processes.
Implementation Method 1
a plurality of gas holes 76c through which the processing gas introduced from the plurality of introduction ports 76a, 76b is ejected
Implementation Method 2
shifting the peak thermal decomposition rate and improving the uniformity of film characteristics
Data Source
AI summary
A processing apparatus includes: a processing container having a substantially cylindrical shape; an injector provided to extend in a longitudinal direction along an inner side of an inner wall of the processing container and including a plurality of introduction ports into which a processing gas is introduced and a plurality of gas holes from which the processing gas introduced from the plurality of introduction ports is ejected into the processing container; and a controller configured to change a flow rate ratio of the processing gas to be introduced into the injector from the plurality of introduction ports.