Inline Plasma Source for Near-Surface Ion Beam Processing
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Solution Overview
Problem
Current semiconductor processing systems lack the capability to perform near-surface processes efficiently, such as native oxide cleaning and surface passivation, without removing the workpiece from the end station, and struggle to combine disparate processes like cleaning and implanting in a single operation.
Innovation Solution
Incorporating an auxiliary plasma source proximate the workpiece, which creates ions and radicals that interact with the workpiece in conjunction with an ion beam, enabling processes like deposition, implantation, etching, pre-treatment, and post-treatment without workpiece removal, by orienting the exit aperture to direct ions and radicals parallel or perpendicular to the ion beam impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If an auxiliary plasma source is added proximate the workpiece, then the capability to perform near-surface processes is improved, but the device complexity increases
Solution Approach 1:
The patent combines the auxiliary plasma source with the existing ion beam system in the same end station, merging two processing capabilities into one integrated system. This allows near-surface processes and ion beam processing to be performed sequentially without workpiece removal, resolving the contradiction by combining functions rather than adding separate independent systems
Solution Approach 2:
The auxiliary plasma source is designed to provide multiple processing functions (cleaning, passivation, deposition) in addition to working with the ion beam system. This multi-functional component increases versatility while being integrated into the existing infrastructure, thereby managing complexity while expanding capability
2Productivity
If multiple processes are performed sequentially without workpiece removal, then the productivity is improved, but the device complexity increases
Solution Approach 1:
Multiple processing functions (plasma cleaning, plasma passivation, ion beam implantation) are merged into a single end station configuration. The auxiliary plasma source and ion beam system share the same workpiece chamber and positioning infrastructure, enabling sequential processing without workpiece removal and thereby improving productivity while controlling complexity through integration
Solution Approach 2:
The system enables continuous processing by eliminating idle transfer time between different processing chambers. The workpiece remains in the end station throughout the sequence of plasma-based pre-treatment, ion beam processing, and post-treatment, maintaining continuous useful action and improving overall productivity
3Manufacturing precision
If the exit aperture directs ions and radicals parallel to the ion beam, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The auxiliary plasma source is positioned and oriented to deliver ions and radicals to specific localized regions of the workpiece surface that correspond to the ion beam impact area. This localized delivery enables precise control over dopant profiles and near-surface modifications at the target location without requiring complex system-wide reconfiguration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for enhanced control over near-surface processes, improved dopant profiles, reduced straggle, and the ability to perform multiple processes sequentially without workpiece transfer, thereby improving process efficiency and reducing damage to underlying layers.
Implementation Method 1
The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film
Implementation Method 2
The ion beam is then used to provide energy so that the ions and radicals can process the workpiece
Implementation Method 3
a dopant material is implanted into a workpiece
Data Source
AI summary
A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.