Inline Surface Engineering Source for Near-Surface Ion Beam Processing
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Solution Overview
Problem
Current semiconductor processing systems lack the capability to perform near-surface processes efficiently, such as native oxide cleaning and surface passivation, without removing the workpiece from the end station, and struggle to combine disparate processes like cleaning and implanting in a single operation.
Innovation Solution
Incorporating an auxiliary plasma source proximate the workpiece, which creates ions and radicals that interact with the workpiece in conjunction with an ion beam, enabling processes like deposition, implantation, etching, pre-treatment, and post-treatment without workpiece removal, by orienting the exit aperture to direct ions and radicals either at the point of ion beam impact or parallel to it.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If an auxiliary plasma source is added proximate the workpiece, then the capability to perform near-surface processes is improved, but the device complexity increases
Solution Approach 1:
The patent combines multiple processing functions (plasma generation, ion beam delivery, heating) into a single integrated end station. The auxiliary plasma source is merged with the existing ion beam system, allowing both plasma-based near-surface processes and ion implantation to occur in the same chamber without requiring separate equipment, thus improving versatility while managing complexity through integration.
Solution Approach 2:
The end station is designed to perform multiple functions: generating plasma for near-surface processing, delivering ion beams for implantation, and providing heated processing. This multi-functional design allows a single device to replace what would traditionally require multiple separate tools, improving adaptability while the shared infrastructure helps manage overall system complexity.
2Productivity
If multiple processes are performed sequentially without workpiece removal, then the productivity is improved, but the risk of contamination or damage increases
Solution Approach 1:
The patent maintains a controlled, inert atmosphere within the end station throughout the sequential processing steps. By keeping the workpiece in vacuum or controlled gas environment and avoiding exposure to ambient air between processes, the system prevents oxidation and contamination that would otherwise occur during workpiece removal and reinstallation, thus maintaining reliability while enabling continuous processing for improved productivity.
3Manufacturing precision
If the exit aperture is oriented to direct ions and radicals at the point of ion beam impact, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The patent applies local quality by directing the auxiliary plasma source's ion and radical flux specifically at the region where the ion beam impacts the workpiece. This localized concentration of reactive species exactly where needed enhances dopant profile control and near-surface process precision. The alignment is optimized for the specific processing zone rather than requiring uniform coverage across the entire workpiece, managing complexity through targeted rather than comprehensive alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for enhanced control over near-surface processes, improved dopant profile control, reduced straggle, and the ability to perform multiple processes sequentially without workpiece transfer, thereby increasing processing efficiency and reducing damage to underlying layers.
Implementation Method 1
an auxiliary plasma source disposed proximate the workpiece, the auxiliary plasma source being used to create ions and radicals which drift toward the workpiece and may form a film
Implementation Method 2
create ions and radicals which drift toward the workpiece and may form a film
Implementation Method 3
The ion beam is then used to provide energy so that the ions and radicals can process the workpiece
Implementation Method 4
an ion beam; and an auxiliary plasma source disposed proximate the workpiece, the auxiliary plasma source being used to create ions and radicals which drift toward the workpiece
Data Source
AI summary
A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.