Furnace Inner Tube Slit Layout for Uniform Semiconductor Processing
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in achieving uniform layer thickness due to limitations in hardware design, leading to non-uniformity in Si deposition and Cl2 etched Si within the wafer.
Innovation Solution
The implementation of furnace inner tube hardware designs with enhanced pumping efficiency and slit configurations, such as slits with widths between 10 mm and 100 mm, and multiple slits arranged in specific patterns, to improve uniformity of layer thickness both within the wafer and across the batch.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If typical hardware designs are used, then device complexity is reduced, but manufacturing precision of layer thickness deteriorates
Solution Approach 1:
The inner tube is segmented into multiple sections along its length, with each section having slits of different widths. This segmentation allows independent control of gas flow at different positions, enabling uniform layer thickness deposition across the wafer surface while maintaining a relatively simple overall structure.
Solution Approach 2:
Different sections of the inner tube are assigned different slit widths to create local variations in gas flow characteristics. This local quality adjustment ensures that each region of the wafer receives appropriate gas flow for uniform deposition, resolving the contradiction between simple hardware design and manufacturing precision.
2Quantity of substance
If slits with larger widths are used, then gas flow rate increases, but uniformity of layer thickness deteriorates
Solution Approach 1:
The gas flow path is segmented into multiple sections with different slit widths. This allows the system to accommodate high gas flow rates while maintaining uniformity by distributing the flow appropriately across different regions of the reaction chamber.
Solution Approach 2:
Slit widths are varied locally along the inner tube to optimize gas flow distribution. Regions requiring higher flow receive wider slits, while regions needing precision receive narrower slits, achieving both high gas flow rate and uniform layer thickness.
3Manufacturing precision
If multiple slits are arranged in specific patterns, then manufacturing precision of layer thickness improves, but device complexity increases
Solution Approach 1:
The complex slit pattern is achieved through segmentation of the inner tube into standardized sections. Each section can be independently manufactured and assembled, reducing overall device complexity while achieving the desired uniform layer thickness through the segmented slit configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a significant improvement in layer thickness uniformity, with testing showing a gain exceeding 30% compared to traditional designs, thereby enhancing the quality of semiconductor processing.
Implementation Method 1
a sidewall defined along a longitudinal axis of the inner tube and including one or more slits defined through the sidewall in a radial direction with respect to the longitudinal axis
Implementation Method 2
one or more heat sources configured to cause a temperature change in the reaction chamber
Implementation Method 3
an injector assembly coupled to at least one of the inner tube or the outer tube and configured to inject one or more process gases into the reaction chamber
Implementation Method 4
an exhaust assembly coupled to the outer tube and configured to exhaust one or more exhaust gases from the reaction chamber via the one or more slits of the inner tube
Data Source
AI summary
Embodiments of the present disclosure provide a furnace for semiconductor processing that includes an inner tube defining a reaction chamber and including a sidewall defined along a longitudinal axis of the inner tube and including one or more slits defined through the sidewall in a radial direction with respect to the longitudinal axis. The one or more slits include at least one of a first slit with a width in a range between 10 mm and 100 mm, or a plurality of separate slits with a total number in a range between 2 and 15. The inner tube includes a closed end substantially enclosing the reaction chamber and an open end opposite the closed end with respect to the longitudinal axis. The reaction chamber is configured to be loaded with one or more semiconductor wafers via the open end.