Inorganic Dielectric Direct Bonding for Microelectronic Assemblies

Solution Overview

Problem

Conventional semiconductor assembly techniques using low temperature polymer dielectrics limit the temperature processing of composite dies, leading to wafer bow issues and reduced heat transfer, which affects processor performance and manufacturing efficiency.

Innovation Solution

The use of inorganic dielectric materials for direct bonding and thermally conductive fill materials in microelectronic assemblies allows for higher temperature processing and improved heat dissipation, enabling more streamlined manufacturing and better handling of composite dies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If low temperature polymer dielectric materials are used in semiconductor assembly, then the assembly can be processed at lower temperatures, but heat transfer is reduced and processor performance deteriorates

Engineering Contradiction:

Improveprocessing temperatureVSAvoidheat transfer

Core Design Contradiction:

TemperatureVSLoss of energy

Solution Approach 1:

The patent changes the material parameter from polymer dielectric to inorganic dielectric, which enables higher temperature processing while maintaining or improving heat transfer properties. This material substitution fundamentally alters the thermal characteristics of the assembly.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structures including inorganic dielectric layers combined with thermally conductive fill materials. This composite approach allows simultaneous achievement of electrical insulation and enhanced thermal management capabilities.

Inventive Principle:

Principle #40Composite materials

2Temperature

If low temperature polymer dielectric materials are used in semiconductor assembly, then processing can be performed at lower temperatures, but wafer bow increases and manufacturing precision deteriorates

Engineering Contradiction:

Improveprocessing temperatureVSAvoidwafer bow control

Core Design Contradiction:

TemperatureVSManufacturing precision

Solution Approach 1:

The patent changes the material parameter from polymer dielectric to inorganic dielectric, which enables higher temperature processing while maintaining or improving heat transfer properties. This material substitution fundamentally alters the thermal characteristics of the assembly.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical/physical constraints of polymer dielectric materials with inorganic dielectric materials that have superior dimensional stability and thermal performance, eliminating wafer bow issues associated with polymer-based assemblies.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Loss of energy

If higher temperature processing is implemented, then heat transfer improves and processor performance increases, but damage to dies or interconnects may occur

Engineering Contradiction:

Improveheat transferVSAvoiddie integrity

Core Design Contradiction:

Loss of energyVSReliability

Solution Approach 1:

The patent employs composite material structures including inorganic dielectric layers combined with thermally conductive fill materials. This composite approach allows simultaneous achievement of electrical insulation and enhanced thermal management capabilities.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The inorganic dielectric material acts as an intermediary that enables efficient heat transfer while protecting sensitive dies and interconnects from direct thermal damage. It serves as a thermal management layer that mediates between heat-generating components and the surrounding environment.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances heat transfer and reduces wafer bow, improving processor performance and manufacturing efficiency by allowing higher temperature processing without damaging the dies or interconnects.

Implementation Method 1

The mold material can negatively affect processor performance by limiting heat transfer away from hot spots in the IC package

Methodology Applied

Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 2

a first microelectronic component coupled to the second surface of the interposer by a first direct bonding region

Methodology Applied

Scientific EffectThermal bonding: Welding

Data Source

PatentEP4016607A1Inter-component material in microelectronic assemblies having direct bonding

Publication Date: 2022.06.22 INTEL CORP

Figure 1
Figure 2
Figure 3A~3B

AI summary

Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include an interposer; a first microelectronic component having a first surface coupled to the interposer by a first direct bonding region and an opposing second surface; a second microelectronic component having a first surface coupled to the interposer by a second direct bonding region and an opposing second surface; a liner material on the surface of the interposer and around the first and second microelectronic components; an inorganic fill material on the liner material and between the first and second microelectronic components; and a third microelectronic component coupled to the second surfaces of the first and second microelectronic components. In some embodiments, the liner material, the inorganic fill material, and a material of the third microelectronic component may include a thermally conductive material.