Inorganic Film Composition Stabilization for Semiconductor Patterning
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Solution Overview
Problem
Conventional inorganic film-forming compositions for multilayer resist processes exhibit time-dependent alterations in film thickness during storage, leading to variations in pattern formation, which is a challenge in the miniaturization of semiconductor devices.
Innovation Solution
The use of a polyacid or its salt, combined with an organic solvent, in the inorganic film-forming composition for a multilayer resist process, which stabilizes the film thickness and reduces variations, enabling the formation of patterns with improved storage stability and thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional inorganic film-forming composition containing metal compound with hydrolyzable group is used, then inorganic film formation is enabled, but film thickness varies with storage time
Solution Approach 1:
The patent changes the chemical parameters of the inorganic film-forming composition by replacing conventional metal compounds with hydrolyzable groups (such as metal alkoxides) with polyacids or their salts. This parameter change eliminates the hydrolysis reaction that causes time-dependent film thickness variations, thereby maintaining composition stability during storage while enabling consistent inorganic film formation.
Solution Approach 2:
The patent employs a composite material approach by using polyacids or their salts combined with specific organic solvents to create a stable inorganic film-forming composition. This composite system provides both the necessary reactivity for inorganic film formation and the compositional stability required for consistent film thickness over extended storage periods.
2Productivity
If multilayer resist process is used to reduce processing size, then degree of integration increases, but pattern formation variations occur due to film thickness instability
Solution Approach 1:
By changing the chemical composition from hydrolyzable metal compounds to polyacids or their salts, the patent eliminates the source of film thickness instability. This enables the multilayer resist process to achieve higher degrees of integration with consistent pattern formation, as the inorganic film thickness remains stable regardless of storage time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a stable inorganic film with minimal time-dependent alterations, suitable for advanced semiconductor manufacturing processes, where precise pattern formation is critical for further miniaturization.
Implementation Method 1
formation of an inorganic film is enabled through hydrolysis or the like of the same
Data Source
AI summary
A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.