Inorganic Hard Mask Composition for Lithography
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Solution Overview
Problem
Conventional hard mask compositions for semiconductor lithography struggle to maintain pattern integrity and selectivity during etching processes for fine patterns less than 100 nm, requiring costly amorphous carbon films and additional deposition steps, while seeking a more cost-effective and efficient inorganic hard mask solution with high etching selectivity.
Innovation Solution
A hard mask composition comprising poly(borodiphenylsiloxane), polyvinylphenol, a cross-linking agent, and a thermal acid generator, which forms an inorganic hard mask film with high etching selectivity over an organic hard mask film, allowing for efficient etching of underlying layers with a mixture gas including oxygen and nitrogen.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If amorphous carbon film is used as hard mask for etching fine patterns, then etching selectivity and pattern integrity are improved, but manufacturing cost and process complexity increase due to additional CVD equipment and deposition steps
Solution Approach 1:
The patent replaces expensive amorphous carbon hard mask with a disposable organic polymer hard mask that can be applied through simple spin-coating. The organic polymer serves its protective function during etching and is then removed, eliminating the need for costly CVD deposition equipment and processes while maintaining pattern integrity for fine features below 100 nm
Solution Approach 2:
The patent substitutes the mechanical/physical vapor deposition process (CVD) with a chemical solution-based spin-coating process. This replacement dramatically simplifies the manufacturing equipment requirements while achieving the same hard mask functionality, directly addressing the contradiction between pattern quality and process complexity
2Strength
If amorphous carbon film is deposited to ensure sufficient thickness for etching survival, then etching resistance is improved, but manufacturing cost increases due to additional CVD equipment requirements
Solution Approach 1:
The organic polymer hard mask provides sufficient etching resistance at much lower manufacturing cost by using solution-based spin-coating instead of expensive CVD deposition. The polymer film, while temporarily serving its protective function, eliminates the need for costly equipment investment and operation
Solution Approach 2:
The patent changes the material state from solid amorphous carbon requiring high-temperature CVD deposition to organic polymer dissolved in solvent that can be applied at room temperature through spin-coating. This parameter change dramatically reduces equipment cost while maintaining adequate film thickness for etching protection
3Manufacturing precision
If inorganic hard mask film is used over organic hard mask film, then etching selectivity is improved, but process complexity increases
Solution Approach 1:
The patent creates a composite hard mask system where an inorganic component (providing etching selectivity) is integrated within an organic polymer matrix. This composite structure delivers the etching selectivity of inorganic materials while maintaining the ease of application and removal characteristics of organic polymers, resolving the contradiction between selectivity and process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a high etching selectivity of 1:90 to 1:100 for the inorganic hard mask film to the organic hard mask film, facilitating the etching of fine patterns with reduced costs and complexity, as demonstrated by the formation of underlying layer patterns with excellent pattern integrity.
Implementation Method 1
a thermal acid generator
Implementation Method 2
a cross-linking agent
Data Source
AI summary
An inorganic hard mask composition, which is useful in the manufacture of semiconductor devices. When an underlying layer pattern of a semiconductor device is formed, an inorganic hard mask film having an excellent etching selectivity to an organic hard mask is further coated over an organic hard mask film and used as a hard mask, thereby facilitating etching of fine patterns.