Inorganic Particles for Crack-Suppressing Semiconductor Connection Materials
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional connecting materials fail to adequately suppress cracking in connection parts under stress loads, which can lead to reliability issues in semiconductor devices.
Innovation Solution
Particles with specific properties, such as an average diameter of 0.1 μm to 15 μm, a 10% K value between 3000 N/mm² and 20000 N/mm², and a particle diameter CV value of 50% or less, are used to form a connecting material that enhances the thickness and strength of the connection part, preventing cracking during stress loads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional connecting materials are used, then the connection part can be formed, but cracking occurs during stress load
Solution Approach 1:
The patent applies parameter changes by carefully controlling the particle diameter (0.1-15 μm), particle diameter CV value (50% or less), and 10% K value (3000-20000 N/mm²) of the inorganic particles to achieve optimal stress distribution and crack suppression in the connection part
Solution Approach 2:
The patent uses composite materials by combining inorganic particles with a glass phase and/or metal phase in the connecting material, creating a multi-phase composite that provides both mechanical strength and stress relaxation properties to prevent cracking
2Manufacturing precision
If particle diameter is reduced to enhance filling, then manufacturing precision improves, but particle strength decreases
Solution Approach 1:
The patent optimizes the particle diameter parameter to a specific range (0.1-15 μm) with a CV value of 50% or less, balancing the benefits of fine particle filling with the need to maintain sufficient particle strength to prevent cracking during connection formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively suppresses cracking and increases connection strength by acting as a stress relaxation material, ensuring the durability of the connection part in semiconductor devices.
Implementation Method 1
the particles have a 10% K value of exceeding 3000 N/mm2 and 20000 N/mm2 or less, and the particles have a particle diameter CV value of 50% or less... effectively suppresses cracking and increases connection strength by acting as a stress relaxation material
Data Source
AI summary
Particles that can suppress the occurrence of cracking during a stress load in a connection part that connects two members to be connected are provided. The particles according to the present invention are particles used to obtain a connecting material for forming the connection part that connects two members to be connected, and the particles are used for forming the connection part such that thickness of the connection part after connection exceeds twice the average particle diameter of the particles before connection, or the particles have an average particle diameter of 0.1 μm or more and 15 μm or less, the particles have a 10% K value of exceeding 3000 N/mm2 and 20000 K/mm2 or less, and the particles have a particle diameter CV value of 50% or less.